Inventor

Roger F. Sinta

Inventor
Woburn, MA, US

Overview

46→
Patents
1986–2017
Patent span
Physics
Primary field (CPC G)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices51%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests28%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds5%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds5%
C07CAcyclic or carbocyclic compounds1%
C07DHeterocyclic compounds1%
C08LCompositions of macromolecular compounds1%
C09KMaterials for miscellaneous applications, not provided for elsewhere1%
H01LSemiconductor devices1%
H04BTransmission1%
PatentTitleYear
9,766,542'Negative chemically-amplified photoresist and imaging method thereof'20178,945,677'Electronic device manufacture using low-k dielectric materials'20157,632,630'Dyed photoresists and methods and articles of manufacture comprising same'20097,482,107'Photoresist composition'20097,147,983'Dyed photoresists and methods and articles of manufacture comprising same'20067,026,093'Photoresist compositions'2006RE038980'Photoresist compositions'20066,794,109'Low abosorbing resists for 157 nm lithography'20046,770,413'Hydroxyphenyl copolymers and photoresists comprising same'20046,706,461'Dyed photoresists and methods and articles of manufacture comprising same'20046,645,698'Photoresist compositions'20036,602,652'Antireflective coating compositions and exposure methods under 200 nm'20036,410,209'Methods utilizing antireflective coating compositions with exposure under 200 nm'20026,107,425'Narrow molecular weight distribution polymers and use of same as resin binders for negative-acting photoresists'20006,077,643'Polymers and photoresist compositions'20006,048,672'Photoresist compositions and methods and articles of manufacture comprising same'20006,037,107'Photoresist compositions'20006,033,830'Antireflective coating compositions'20005,976,770'Dyed photoresists and methods and articles of manufacture comprising same'19995,919,597'Methods for preparing photoresist compositions'19995,917,024'Acid labile photoactive composition'19995,900,346'Compositions comprising photoactivator, acid, generator and chain extender'19995,886,102'Antireflective coating compositions'19995,858,605'Acid labile photoactive composition'19995,827,634'Positive acid catalyzed resists'19985,763,536'Polymer for positive acid catalyzed resists'19985,731,386'Polymer for positive acid catalyzed resists'19985,731,364'Photoimageable compositions comprising multiple arylsulfonium photoactive compounds'19985,719,003'Method for increasing the differential solubility of an imaged photoresist through hydroxy group blocking via reaction with vinyl ethers'19985,700,624'Positive acid catalyzed resists having an alkali soluble resin with acid labile groups and inert blocking groups'19975,641,604'Photoresist composition with improved differential solubility through hydroxyl group blocking via reaction with vinyl ethers'19975,627,010'Photoimageable resist compositions containing photobase generator'19975,541,263'Polymer having inert blocking groups'19965,514,520'Radiation sensitive composition comprising polymer having inert blocking groups'19965,384,229'Photoimageable compositions for electrodeposition'19955,362,600'Radiation sensitive compositions comprising polymer having acid labile groups'19945,344,742'Benzyl-substituted photoactive compounds and photoresist compositions comprising same'19945,258,257'Radiation sensitive compositions comprising polymer having acid labile groups'19935,212,046'Near UV photoresist'19935,210,000'Photoresist and method for forming a relief image utilizing composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units'19935,128,232'Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units'19924,857,227'Liquid crystal mixtures having widened smectic temperature range'19894,843,141'Melt-processable aromatic polyesteramide having repeating 2,2\'-substituted biphenylene radicals'19894,792,597'Melt-processable polyesteramides having para-linked, substituted-phenylene radicals'19884,608,429'Low-melting aromatic polyesters with repeating 2,2\'-substituted-biphenylene radicals'19864,575,547'Low-melting aromatic polyesters of trifluoromethyl terephthalic acid or ester forming derivatives thereof'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–1989Patents assigned to POLAROID CORP (4)· patent assignee history
1986Based in Arlington, MA, US· patent location history
1988–2015Based in Woburn, MA, US· patent location history
1993–1995Patents assigned to SHIPLEY CO (6)· patent assignee history
1996–2009Patents assigned to SHIPLEY CO LLC (29)· patent assignee history
2015Patents assigned to ASPEN AEROGELS INC (1)· patent assignee history
2015Patents assigned to BEGAG REDOUANE (1)· patent assignee history
2017Based in Beijing, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHIPLEY CO LLC291996–2009
SHIPLEY CO61993–1995
POLAROID CORP41986–1989
ASPEN AEROGELS INC12015
BEGAG REDOUANE12015
Locations
LocationPatentsSpan
Woburn, Massachusetts, US431988–2015
Arlington, Massachusetts, US21986
Beijing, CN12017