LexDanaLexDanabeta
Inventor

Michel Marty

Inventor
Saint Paul de Varces, FR

Overview

63→
Patents
1986–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 63 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices21%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation20%
H01LSemiconductor devices16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
C22CAlloys5%
G02BOptical elements, systems or apparatus5%
H04NPictorial communication, e.g. television2%
C22FChanging the physical structure of non-ferrous metals and non-ferrous alloys2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
PatentTitleYear
10,014,337Method of manufacturing a nanostructured spectral filter20189,985,119Image sensor with reduced spectral and optical crosstalk and method for making the image sensor20189,871,074'Method of forming an infrared filter associated with an image sensor'20189,812,615'Method of optimizing the quantum efficiency of a photodiode'20179,685,472'Image sensor with reduced spectral and optical crosstalk and method for making the image sensor'20179,640,704'High quantum efficiency photodetector'20179,530,817'Back side illumination photodiode of high quantum efficiency'20169,520,435'Image sensor illuminated and connected on its back side'20169,450,000'Photodiode of high quantum efficiency'20169,397,128'Process for forming a stack of different materials, and device comprising this stack'20169,299,865'Spad photodiode of high quantum efficiency'20169,231,014'Back side illumination photodiode of high quantum efficiency'20169,219,095'Method for producing an optical filter in an integrated circuit, and corresponding integrated circuit'20159,214,485'Thick multilayer interference filter having a lower metal layer located within an interconnect region'20159,171,973'Method for producing an integrated imaging device with front face illumination comprising at least one metal optical filter, and corresponding device'20159,052,560'Nanoprojector panel formed of an array of liquid crystal cells'20158,981,516'Back-side illuminated image sensor provided with a transparent electrode'20158,975,730'Method for protection of a layer of a vertical stack and corresponding device'20158,963,273'Back-side illuminated image sensor with a junction insulation'20158,735,208'Method for forming a back-side illuminated image sensor'20148,703,528'Method for forming a back-side illuminated image sensor with a junction insulation'20148,704,282'Method for forming a back-side illuminated image sensor'20148,524,522'Microelectronic device, in particular back side illuminated image sensor, and production process'20138,436,440'Method for forming a back-side illuminated image sensor'20137,902,621'Integrated circuit comprising mirrors buried at different depths'20117,824,978'Bipolar transistor with high dynamic performances'20107,691,727'Method for manufacturing an integrated circuit with fully depleted and partially depleted transistors'20107,687,833'Component containing a baw filter'20107,476,574'Method for forming an integrated circuit semiconductor substrate'20097,470,559'Semiconductor component comprising a buried mirror'20087,456,071'Method for forming a strongly-conductive buried layer in a semiconductor substrate'20087,122,879'Bipolar transistor with high dynamic performances'20067,115,465'Method for manufacturing a bipolar transistor'20067,038,289'Deep insulating trench'20066,972,451'Trench capacitor in a substrate with two floating electrodes independent from the substrate'20056,902,970'Integrated circuit including, and fabrication method for producing, bipolar and MOSFET transistors'20056,828,646'Isolating trench and manufacturing process'20046,723,610'Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process'20046,656,812'Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process'20036,653,182'Process for forming deep and shallow insulative regions of an integrated circuit'20036,642,096'Bipolar transistor manufacturing'20036,551,891'Process for fabricating a self-aligned vertical bipolar transistor'20036,465,317'Process for producing a bipolar transistor with self-aligned emitter and extrinsic base'20026,436,782'Process for fabricating a self-aligned double-polysilicon bipolar transistor'20026,423,996'Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit'20026,316,818'Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process'20016,265,275'Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base'20016,180,520'Multiple layer interconnects with low stray lateral capacitance'20016,177,717'Low-noise vertical bipolar transistor and corresponding fabrication process'20016,177,715'Integrated circuit having a level of metallization of variable thickness'20016,176,949'Titanium aluminide which can be used at high temperature'20016,136,640'Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit'20006,100,595'Semiconductor device having optoelectronic remote signal-exchange means'20006,081,030'Semiconductor device having separated exchange means'20006,031,445'Transformer for integrated circuits'20005,976,898'Localization of defects of a metallic layer of a semiconductor circuit'19995,815,792'Nickel-based superalloys with high temperature stability'19985,486,242'Niobium or tantalum based high specific strength inter metallic compounds and alloys'19965,284,618'Niobium and titanium based alloys resistant to oxidation at high temperatures'19945,104,614'Superalloy compositions with a nickel base'19924,714,951'Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal'19874,601,874'Process for forming a titanium base alloy with small grain size by powder metallurgy'19864,593,454'Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2001Based in Buc, FR· patent location history
1986–2015Based in Grenoble, FR· patent location history
1999–2018Patents assigned to ST MICROELECTRONICS SA (51)· patent assignee history
1999–2016Based in Varces, FR· patent location history
2000–2018Based in Saint Paul de Varces, FR· patent location history
2001–2018Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (14)· patent assignee history
2010–2016Patents assigned to ST MICROELECTRONICS CROLLES 2 (13)· patent assignee history
2010Based in Barraux, FR· patent location history
2013–2015Patents assigned to MARTY MICHEL (6)· patent assignee history
2016–2018Patents assigned to ST MICROELECTRONICS CROLLES 2 SAS (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ST MICROELECTRONICS SA511999–2018
COMMISSARIAT ENERGIE ATOMIQUE142001–2018
ST MICROELECTRONICS CROLLES 2132010–2016
MARTY MICHELself62013–2015
ST MICROELECTRONICS CROLLES 2 SAS52016–2018
Locations
LocationPatentsSpan
Saint Paul de Varces, FR362000–2018
Varces, FR151999–2016
Buc, FR61986–2001
Grenoble, FR31986–2015
Barraux, FR12010