Inventor
SRINIVAS GANDIKOTA
Inventor
US
Overview
Patents· 69 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
C23CCoating metallic material17%
H10DInorganic electric semiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10BElectronic memory devices5%
H01JElectric discharge tubes or discharge lamps3%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds1%
B82YSpecific uses or applications of nanostructures0%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium0%
PatentTitleYear
12,590,369Atomic layer deposition using novel oxygen-containing precursors202612,590,368Method of forming interconnect structure202612,588,437Integrated dipole region for transistor202612,555,741Magnetic housing systems202612,542,256Batch processing chambers for plasma-enhanced deposition202612,467,133Conformal molybdenum deposition202512,463,093Method of tuning film properties of metal nitride using plasma202512,453,086Low resistivity metal contact stack202512,438,044Methods and apparatus for seam reduction or elimination202512,410,513Seamless gapfill of metal nitrides202512,394,670Nucleation-free gap fill ALD process202512,325,910Deposition of conformal and gap-fill amorphous silicon thin-films202512,328,872Liner for V-NAND word line stack202512,322,592Deposition of silicon-based dielectric films202512,305,278Method of reducing titanium nitride etching during tungsten film formation202512,288,717Metal based hydrogen barrier202512,230,688MOSFET gate engineerinng with dipole films202512,183,798Threshold voltage modulation for gate-all-around FET architecture202412,114,488Enhancing gapfill performance of dram word line202412,112,951Integrated dipole region for transistor202412,104,243Methods and apparatus for processing a substrate202412,100,595Amorphous silicon-based scavenging and sealing EOT202412,062,545Fluorine-free tungsten ALD for dielectric selectivity improvement202412,051,734PMOS high-k metal gates202412,022,650Low resistivity DRAM buried word line stack202412,020,982Metal based hydrogen barrier202411,996,455P-type dipole for P-FET202411,997,849V-NAND stacks with dipole regions202411,961,734Treatments to enhance material structures202411,955,332Treatments to enhance material structures202411,932,939Lids and lid assembly kits for atomic layer deposition chambers202411,908,914Methods of forming semiconductor structures202411,887,855Methods for depositing fluorine/carbon-free conformal tungsten202411,887,856Enhanced spatial ALD of metals through controlled precursor mixing202411,888,045Integrated dipole flow for transistor202411,869,806Methods of forming molybdenum contacts202411,817,320CVD based oxide-metal multi structure for 3D NAND memory devices202311,776,980Methods for reflector film growth202311,732,358High temperature chemical vapor deposition lid202311,705,335Conformal high concentration boron doping of semiconductors202311,658,218P-type dipole for p-FET202311,646,226Method of tuning film properties of metal nitride using plasma202311,621,160Doped and undoped vanadium oxides for low-k spacer applications202311,621,226Graphene diffusion barrier202311,587,764Magnetic housing systems202311,587,936Low resistivity DRAM buried word line stack202311,557,478In-situ high power implant to relieve stress of a thin film202311,552,177PMOS high-K metal gates202311,515,144In-situ film annealing with spatial atomic layer deposition202211,515,207Methods of forming metal chalcogenide pillars202211,488,856Methods for gapfill in high aspect ratio structures202211,476,267Liner for V-NAND word line stack202211,462,438Volumetric expansion of metal-containing films by silicidation202211,447,866High temperature chemical vapor deposition lid202211,437,271Seamless gap fill202211,414,751Self-aligned structures from sub-oxides202211,417,517Treatments to enhance material structures202211,384,432Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate202211,359,282Methods for forming impurity free metal alloy films202211,328,928Conformal high concentration boron doping of semiconductors202211,315,943Bottom-up approach to high aspect ratio hole formation in 3D memory structures202211,289,579P-type dipole for p-FET202211,289,374Nucleation-free gap fill ALD process202211,244,824Conformal doped amorphous silicon as nucleation layer for metal deposition202211,245,022Integrated dipole flow for transistor202211,232,955Methods of etching metal oxides with less etch residue202211,189,529Methods of forming metal chalcogenide pillars202111,177,164Self-aligned high aspect ratio structures and methods of making202111,158,507In-situ high power implant to relieve stress of a thin film2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to APPLIED MATERIALS INC (69)· patent assignee history
2021–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 69 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 69 | 2021–2026 |