Inventor
Michio Kadota
Inventor
Kyoto, JP
Overview
Patents· 173 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H03Hprimary
H03HImpedance networks, e.g. resonant circuits59%
Y10TTechnical subjects covered by former us classification13%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
H10NElectric solid-state devices not otherwise provided for3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
C30BSingle-crystal growth1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
PatentTitleYear
10,312,883Elastic wave device201910,177,739Elastic wave device20199,929,717'Elastic wave device'20189,755,614'Tunable filter'20179,564,873'Elastic wave device'20179,413,331'Piezoelectric bulk-wave resonator'20169,230,745'Variable capacitance element and tunable filter'20168,810,104'Acoustic wave device and method for fabricating the same'20148,680,744'Surface acoustic wave device'20148,677,582'Method for fabricating acoustic wave device'20148,658,097'Sensor for detecting substance in liquid'20148,552,818'Tunable filter'20138,427,032'Surface acoustic wave device'20138,384,268'Surface acoustic wave device having an increased surface acoustic wave velocity and an increased electromechanical coupling coefficient'20138,310,321'Tunable filter including a variable capacitor connected with a surface acoustic wave resonator'20128,304,959'Surface acoustic wave device'20128,305,163'Tunable filter including a surface acoustic wave resonator and a variable capacitor'20128,261,418'Method for manufacturing surface acoustic wave device'20128,256,275'In-liquid-substance detection sensor'20128,207,650'Surface acoustic wave sensor'20128,183,737'Surface acoustic wave device including electrode fingers partially disposed in grooves in a piezoelectric substrate'20128,169,121'Surface acoustic wave device including electrode fingers partially disposed in grooves in a piezoelectric substrate'20128,156,814'Surface acoustic wave sensor'20127,956,511'Surface acoustic wave device including an IDT formed by a metal filled in grooves on a piezoelectric substrate'20117,956,512'Surface acoustic wave device including an IDT formed by a metal filled in grooves on a piezoelectric substrate'20117,923,896'Surface acoustic wave device'20117,902,718'Boundary acoustic wave device'20117,888,841'Boundary acoustic wave device'20117,876,021'Surface acoustic wave device including an IDT defined by a metal filled in grooves in a piezoelectric substrate'20117,863,801'Acoustic wave device'20117,821,179'Acoustic wave resonator'20107,816,837'Surface acoustic wave sensor'20107,803,632'Method for detecting substance in liquid and sensor for detecting substance in liquid'20107,804,221'Surface acoustic wave device'20107,762,124'Sensor for detecting substance in liquid'20107,730,596'Method for manufacturing a surface acoustic wave device'20107,705,515'Surface acoustic wave device'20107,701,114'Surface acoustic wave device'20107,701,113'Acoustic wave device and method for fabricating the same'20107,656,070'Surface wave sensor apparatus'20107,649,303—20107,629,866'Method for manufacturing surface acoustic wave device and surface acoustic wave device'20097,626,314'Surface acoustic wave device'20097,626,313'Surface acoustic wave device'20097,581,306'Method for producing a boundary acoustic wave device'20097,569,972'Surface acoustic wave device'20097,550,898'Boundary acoustic wave device and process for producing same'20097,535,152'Lamb wave device'20097,501,293'Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device'20097,425,788'Surface acoustic wave device'20087,418,772'Method for manufacturing a surface acoustic wave'20087,411,334'Surface acoustic wave apparatus and manufacturing method therefor'20087,394,180'Oscillator circuit including surface acoustic wave sensor and biosensor apparatus'20087,345,400'Surface acoustic wave device'20087,339,304'Surface acoustic wave device'20087,327,071'Surface acoustic wave device'20087,322,093'Method for producing a boundary acoustic wave device'20087,315,107'Surface acoustic wave device'2008RE039975'Surface acoustic wave device and communication device'20087,230,365'Surface acoustic wave apparatus and manufacturing method therefor'20077,218,039'Surface acoustic wave device'20077,212,080'Surface acoustic wave device having two piezoelectric substrates with different cut angles'20077,209,018'Surface acoustic wave device'20077,208,860'Surface acoustic wave device'20077,194,793'Method for producing an edge reflection type surface acoustic wave device'20077,180,222'Surface acoustic wave device'20077,141,909'Surface acoustic wave device'20067,109,634'End surface reflection type surface acoustic wave device'20067,034,433'Surface acoustic wave device'20067,010,837'Method for manufacturing an electronic component'20067,009,325'Surface acoustic wave device'20067,009,468'Surface acoustic wave device and electronic device using the same'20066,972,508'Surface acoustic wave device'20056,946,930'Surface acoustic wave device and electronic device using the same'20056,914,498'Surface acoustic wave device on LiTaO3 substrate using primarily silver electrodes covered with SiO2 film'20056,879,225'Surface acoustic wave device'20056,873,226'Edge-reflection surface acoustic wave filter'20056,865,786'Method for manufacturing a surface acoustic wave device using a shear horizontal type surface acoustic wave'20056,847,154'Surface acoustic wave device and communication device'20056,836,196'Surface acoustic wave apparatus utilizing a leaky surface acoustic wave'20046,831,342'Optical device for converting incident light into a second harmonic'20046,826,815'Method for manufacturing a surface acoustic wave device'20046,810,566'Method of manufacturing a surface acoustic wave element'20046,806,796'End-surface reflection type surface acoustic wave filter'20046,789,297'Method of manufacturing a surface acoustic wave element'20046,784,764'End-surface reflection type surface acoustic wave filter'20046,781,282'Longitudinally coupled resonator-type surface acoustic wave device'20046,733,895'ZnO film, method for manufacturing the same, and luminescent element including the same'20046,731,044'Surface acoustic wave device having an interdigital transducer provided on a main region of a piezoelectric substrate'20046,717,327'Surface acoustic wave device'20046,710,509'Surface acoustic wave device'20046,703,760'Surface acoustic wave device and communication apparatus'20046,670,739'Surface acoustic wave apparatus'20036,663,943'Surface acoustic wave device and method for making the same'20036,637,087'Method of producing edge reflection type surface acoustic wave device'20036,625,855'Method for producing surface acoustic wave device'20036,617,752'Surface acoustic wave device and manufacturing method therefor'20036,617,183'Method for forming p-type semiconductor film and light emitting device using the same'20036,606,333'Semiconductor photonic device'20036,603,371'Surface acoustic wave device having a small acoustic velocity distribution and method of producing the same'20036,600,391'End surface reflection type surface acoustic wave apparatus utilizing waves with a longitudinal wave or shear vertical wave main component'20036,593,596'Semiconductor light emitting device and method for adjusting the luminous intensity thereof'20036,592,729'In-line sputtering apparatus'20036,590,336'Light emitting device having a polar plane piezoelectric film and manufacture thereof'20036,587,016'Surface acoustic wave filter with angled reflection by piezoelectric substrate reflection edges, duplexer, and communication device'20036,564,439'Method and manufacturing a surface acoustic wave element'20036,534,895'Surface acoustic wave device, shear bulk wave transducer, and longitudinal bulk wave transducer'20036,531,937'Edge reflection type surface acoustic wave filter'20036,525,345'Semiconductor photonic device'20036,458,614'Opto-electronic integrated circuit'20026,448,585'Semiconductor luminescent element and method of manufacturing the same'20026,437,363'Semiconductor photonic device'20026,437,668'Surface acoustic wave resonator, surface acoustic wave device, and communication device using shear horizontal waves'20026,429,569'Surface acoustic wave device and communication apparatus'20026,377,139'Edge reflection type surface acoustic wave device with grooves or steps at the reflection edges'20026,369,491'Surface acoustic wave device and method for manufacturing the same'20026,369,667'Surface acoustic wave device and communication device utilizing shear horizontal waves'20026,366,002'Surface acoustic wave device and communication device'20026,362,496'Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layer'20026,356,167'Surface acoustic wave resonator, surface acoustic wave filter, duplexer communications apparatus and surface acoustic wave apparatus, and production method of surface acoustic wave resonator'20026,355,945'Semiconductor optical device and optoelectronic integrated circuit device including a ZnO buffer layer'20026,353,371'Transversely coupled resonator type surface acoustic wave filter and longitudinally coupled resonator type surface acoustic wave filter'20026,346,864'Saw resonator filter and duplexer utilizing SH waves, substrate edge reflection, and sub-interdigital transducer portions'20026,335,584'Edge reflection type surface acoustic wave device'20026,326,645'Semiconductor photonic device'20016,317,014'Surface acoustic wave resonator, filter, duplexer and communication device utilizing a shear horizontal wave on langasite'20016,313,563'Edge reflection type surface acoustic wave device'20016,310,524'Edge reflection type longitudinally coupled saw resonator filter'20016,297,712'Multi-mode edge reflection saw filter device with ground electrodes between stages, duplexer, and communication device'20016,297,713'Surface acoustic wave device with split electrodes and outermost electrodes of a different width than the split electrodes'20016,291,258'Semiconductor photonic device, method for making the same, and method for forming ZnO film'20016,291,923'Surface acoustic wave device'20016,291,257'Semiconductor photonic device having a ZnO film as a buffer layer and method for forming the ZnO film'20016,282,357'Optical waveguide, acousto-optic deflector and manufacturing method thereof'20016,271,617'Surface acoustic wave device with a tungsten-aluminum layered interdigital transducer'20016,218,763'Surface acoustic wave resonator, filter, duplexer and communication apparatus'20016,185,801'Method of manufacturing surface acoustic wave device'20016,163,099'Surface acoustic wave device having a langasite single crystal substrate'20006,154,105'Surface acoustic wave device with specific electrode materials and quartz substrate euler angles'20006,150,900'Surface acoustic wave filter duplexer and communications apparatus utilizing edge reflection of SH-type waves'20006,146,916'Method for forming a GaN-based semiconductor light emitting device'20006,127,769'Surface acoustic wave device'20006,088,462'Surface acoustic wave device'20005,986,523'Edge reflection type longitudinally coupled surface acoustic wave filter'19995,977,686'Surface acoustic wave filter'19995,965,969'Surface acoustic wave device using higher order mode of leakage elastic surface acoustic wave'19995,952,899'Ladder filter having edge reflection type saw resonators'19995,953,433'Surface acoustic wave device'19995,914,554'Surface wave resonator'19995,894,185'Piezoelectric transformer'19995,847,486'Love-wave device including a thin film of TA or W'19985,838,217'Longitudinally coupling acoustic surface wave double mode filter utilizing end-face reflecting waves'19985,802,685'Method for manufacturing surface wave devices of the end-face reflection type'19985,793,147'Surface wave resonator having single component including a plurality of resonant units'19985,781,083'Surface wave resonator having a plurality of resonance frequencies'19985,767,603'Piezoelectric resonators for trap circuits having a plurality of trap frequencies'19985,719,538'Surface acoustic wave device having negative temperature coefficient of decay'19985,714,830'Free edge reflective-type surface acoustic wave device'19985,708,403'Saw resonator having transverse mode ripple at antiresonance point'19985,689,362'Acousto-optic deflector device'19975,684,437'End face reflection type surface wave resonator'19975,657,152'Acoustooptic device'19975,444,322'Elastic convolver'19955,432,392'Surface wave device'19955,260,913'Surface wave device'19935,184,042'Surface wave device'19934,604,595'Surface acoustic wave device having interdigitated comb electrodes weighted for odd/even response'19864,388,600'Surface acoustic wave device'19834,384,264'Surface acoustic wave device'19834,308,510'Surface acoustic wave filter'19814,291,285'Surface acoustic wave device and method of manufacturing'19814,276,524'Acoustic surface wave device'19814,224,725'Method for manufacturing an acoustic surface wave interaction device'1980Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1980–2019Patents assigned to MURATA MANUFACTURING CO (170)· patent assignee history
1980–2014Based in Kyoto, JP· patent location history
1986–2019Based in Nagaokakyo, JP· patent location history
2012–2014Patents assigned to KADOTA MICHIO (15)· patent assignee history
2012–2014Patents assigned to NISHIYAMA KENJI (4)· patent assignee history
2012Patents assigned to KIMURA TETSUYA (3)· patent assignee history
2012Based in Nagaokayo, JP· patent location history
2013–2014Patents assigned to NAKAO TAKESHI (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MURATA MANUFACTURING CO | 170 | 1980–2019 |
| KADOTA MICHIOself | 15 | 2012–2014 |
| NISHIYAMA KENJI | 4 | 2012–2014 |
| KIMURA TETSUYA | 3 | 2012 |
| NAKAO TAKESHI | 3 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 149 | 1980–2014 |
| Nagaokakyo, JP | 23 | 1986–2019 |
| Nagaokayo, JP | 1 | 2012 |