Inventor
Kousuke Nakamura
Inventor
Hitachi, JP
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C04Bprimary
C04BLime, magnesia18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H04BTransmission10%
H01BCables7%
F16CShafts4%
G11BInformation storage based on relative movement between record carrier and transducer4%
H01CResistors4%
H03MCoding4%
H05KPrinted circuits4%
Y10TTechnical subjects covered by former us classification4%
PatentTitleYear
8,849,127'Visible light communication transmitter and visible light communication system'20148,750,719'Visible light communication receiver, visible light communication system, and visible light communication method'20148,742,317'Visible light receiver circuit'20148,526,825'Visible light communication transmitter and visible light communication system'20138,189,180'Optical fiber transmission line measurement apparatus and system'20128,059,972'Optical receiver and visible light communication system'20117,650,082'Optical communication transmitter, optical communication receiver, optical communication system, and communication apparatus'20106,275,175'Device for encoding/decoding n-bit source words into corresponding m-bit channel words, and vice versa'20016,225,921'Device for encoding/decoding n-bit source words into corresponding m-bit channel words, and vice versa'20016,175,318'Device for encoding/decoding n-bit source words into corresponding m-bit channel words, and vice versa'20015,378,417'Process for producing ceramic compositions'19955,316,987'Ceramic composite and process for production thereof'19945,130,055'Ceramic composite and process for the production thereof'19924,923,829'Composite ceramics and method of making the same'19904,690,793'Nuclear fusion reactor'19874,651,192'Ceramic packaged semiconductor device'19874,585,706'Sintered aluminum nitride semi-conductor device'19864,571,610'Semiconductor device having electrically insulating substrate of SiC'19864,561,010'Electrically insulating silicon carbide sintered body'19854,555,358'Electrically conductive sintered ceramics and ceramic heaters'19854,540,673'Sintered aluminum nitride and semi-conductor device using the same'19854,528,121'Electroconductive ceramics'19854,517,584'Ceramic packaged semiconductor device'19854,467,309'High temperature thermistor'19844,370,421'Electrically insulating substrate and a method of making such a substrate'19834,352,120'Semiconductor device using SiC as supporter of a semiconductor element'19824,345,179'Resistor glass seal spark plug'19824,065,971'Semiconductor pressure transducer'1978Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1978–1995Patents assigned to HITACHI LTD (17)· patent assignee history
1978–1995Based in Hitachi, JP· patent location history
1992–2014Patents assigned to NAKAMURA KOUSUKE (7)· patent assignee history
2001Patents assigned to PHILIPS CORP (3)· patent assignee history
2001–2013Based in Tokyo, JP· patent location history
2010–2014Patents assigned to TAIYO YUDEN KK (6)· patent assignee history
2010–2014Based in Gunma, JP· patent location history
2011–2014Patents assigned to YAMADA MASASHI (5)· patent assignee history
2012Based in Fukuoka, JP· patent location history
2014Based in Takasaki, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 17 | 1978–1995 |
| NAKAMURA KOUSUKEself | 7 | 1992–2014 |
| TAIYO YUDEN KK | 6 | 2010–2014 |
| YAMADA MASASHI | 5 | 2011–2014 |
| PHILIPS CORP | 3 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hitachi, JP | 18 | 1978–1995 |
| Tokyo, JP | 4 | 2001–2013 |
| Gunma, JP | 3 | 2010–2014 |
| Takasaki, JP | 2 | 2014 |
| Fukuoka, JP | 1 | 2012 |