Inventor

Harry-Hak-Lay Chuang

Inventor

Singapore, SG

Overview

2003–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 339 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices31%

H01LSemiconductor devices25%

H10BElectronic memory devices13%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

H10NElectric solid-state devices not otherwise provided for5%

G11CStatic stores3%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%

G06FElectric digital data processing1%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices0%

PatentTitleYear

11,121,308Sidewall spacer structure for memory cell2021 11,101,371Structure and method for vertical tunneling field effect transistor with leveled source and drain2021 11,094,545Self-aligned insulated film for high-K metal gate device2021 11,088,199Semiconductor device2021 11,088,083DC and AC magnetic field protection for MRAM device using magnetic-field-shielding structure2021 11,075,335Techniques for MRAM MTJ top electrode connection2021 11,063,058Memory device with metal gate2021 11,063,208Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacer2021 11,056,566Split gate memory device and method of fabricating the same2021 10,878,928One-time-programmable (OTP) implementation using magnetic junctions2020 10,877,089Semiconductor wafer testing system and related method for improving external magnetic field wafer testing2020 10,868,024Method of forming embedded nonvolatile memory2020 10,868,234Storage device having magnetic tunnel junction cells of different sizes, and method of forming storage device2020 10,861,954High-K film apparatus and method2020 10,840,149Fabrication method of a metal gate structure2020 10,825,498Magnetic random access memory structure and manufacturing method of the same2020 10,825,499Magnetic random access memory structure and manufacturing method of the same2020 10,818,609Package structure and method for fabricating the same2020 10,811,504Semiconductor structure for flash memory cells and method of making same2020 10,797,230Techniques for MRAM MTJ top electrode to metal layer interface including spacer2020 10,790,439Memory cell with top electrode via2020 10,748,895Semiconductor arrangement and formation thereof2020 10,727,272Semiconductor structure and manufacturing method of the same2020 10,727,274Techniques for MRAM top electrode via connection2020 10,720,571Magnetic memory structure and method of forming the same2020 10,692,750Method for fabricating a semiconductor device2020 10,686,125Memory device2020 10,672,760Semiconductor die2020 10,672,975Magnetic tunnel junction with reduced damage2020 10,665,600Memory devices and method of fabricating same2020 10,658,373Method for manufacturing semiconductor device with metal gate memory device and metal gate logic device2020 10,658,492Polysilicon design for replacement gate technology2020 10,636,961Semiconductor structure and method of forming the same2020 10,553,699Gate structure of a semiconductor device2020 10,553,580Method of manufacturing semiconductor device2020 10,535,675High voltage CMOS with co-planar upper gate surfaces for embedded non-volatile memory2020 10,535,814Techniques for MRAM MTJ top electrode connection2020 10,522,740Techniques for MRAM MTJ top electrode to metal layer interface including spacer2019 10,516,026Split gate memory device and method of fabricating the same2019 10,510,803Semiconductor memory device and method for fabricating the same2019 10,510,763Embedded nonvolatile memory and forming method thereof2019 10,510,802Semiconductor device and method of manufacturing the same2019 10,510,804Semiconductor structure integrated with magnetic tunneling junction and manufacturing method thereof2019 10,504,958Semiconductor structure and manufacturing method of the same2019 10,497,861Manufacturing techniques and corresponding devices for magnetic tunnel junction devices2019 10,490,654Vertical tunneling field-effect transistor cell and fabricating the same2019 10,490,460Semiconductor arrangement and method of forming2019 10,490,248Magnetic random access memory structure and manufacturing method of the same2019 10,453,932Semiconductor structure for flash memory cells and method of making same2019 10,424,652Vertical tunneling field-effect transistor cell and fabricating the same2019 10,418,361Circuit incorporating multiple gate stack compositions2019 10,403,736Polysilicon design for replacement gate technology2019 10,388,531Self-aligned insulated film for high-k metal gate device2019 10,332,882Semiconductor device having protective structure over shallow trench isolation region and fabricating method thereof2019 10,304,903Semiconductor structure2019 10,276,447Semiconductor structures and methods of forming the same2019 10,276,588HKMG high voltage CMOS for embedded non-volatile memory2019 10,270,026Multilayered spacer structure for a magnetic tunneling junction and method of manufacturing2019 10,270,025Semiconductor structure having magnetic tunneling junction (MTJ) layer2019 10,177,238High-K film apparatus and method2019 10,163,919Embedded flash memory device with floating gate embedded in a substrate2018 10,164,169Memory device having a single bottom electrode layer2018 10,164,076Vertical tunneling field-effect transistor cell and fabricating the same2018 10,147,794Split gate memory device and method of fabricating the same2018 10,134,743Structure and method for statice random access memory device of vertical tunneling field effect transistor2018 10,134,807Structure and formation method of integrated circuit structure2018 10,109,790Method for manufacturing mixed-dimension and void-free MRAM structure2018 10,103,253Structure and method for vertical tunneling field effect transistor with leveled source and drain2018 10,084,061Polysilicon design for replacement gate technology2018 10,068,836Metal gate transistor, integrated circuits, systems, and fabrication methods thereof2018 10,068,945Semiconductor structure integrated with magnetic tunneling junction and manufacturing method thereof2018 10,068,773Contact formation for split gate flash memory2018 10,050,047Method to improve floating gate uniformity for non-volatile memory device2018 10,050,050Semiconductor device with metal gate memory device and metal gate logic device and method for manufacturing the same2018 10,043,970Determining a characteristic of a monitored layer on an integrated chip2018 10,038,137MRAM device and method for fabricating the same2018 10,032,828Semiconductor memory device and method for fabricating the same2018 10,026,656Metal gate features of semiconductor die2018 10,008,538Semiconductor structure and method of forming the same2018 9,985,075Dummy bottom electrode in interconnect to reduce CMP dishing2018 9,978,759Memory devices and method of forming same2018 9,978,850Contact for high-k metal gate device2018 9,978,853Method of forming gate structure of a semiconductor device2018 9,972,524Method for fabricating a semiconductor device2018 9,929,168'Embedded memory and methods of forming the same'2018 9,929,251'Polysilicon design for replacement gate technology'2018 9,911,805'Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)'2018 9,905,751'Magnetic tunnel junction with reduced damage'2018 9,893,278'Embedded memory device between noncontigous interconnect metal layers'2018 9,893,120'Semiconductor structure and method of forming the same'2018 9,865,716'System and method for a vertical tunneling field-effect transistor cell'2018 9,865,510'Device and methods for high-K and metal gate slacks'2018 9,865,610'Si recess method in HKMG replacement gate technology'2018 9,853,125Vertical tunneling field-effect transistor cell and fabricating the same2017 9,842,986'Semiconductor structure and method of forming the same'2017 9,837,322Semiconductor arrangement and method of forming2017 9,831,235Method of making structure having a gate stack2017 9,818,935'Techniques for MRAM MTJ top electrode connection'2017 9,806,172'Vertical tunneling field-effect transistor cell and fabricating the same'2017 9,780,180'Semiconductor device with partially unsilicided source/drain'2017 9,780,301'Method for manufacturing mixed-dimension and void-free MRAM structure'2017 9,779,947'Self-aligned insulated film for high-k metal gate device'2017 9,768,076'Semiconductor device and method of forming the same'2017 9,767,878'Semiconductor memory device and method for controlling the same'2017 9,741,728'Method for forming a split-gate flash memory cell device with a low power logic device'2017 9,735,245'Recessed salicide structure to integrate a flash memory device with a high Îº, metal gate logic device'2017 9,721,947'Semiconductor device and method of manufacturing'2017 9,716,222'Semiconductor structure and method for manufacturing the same'2017 9,711,605'Contact for high-k metal gate device'2017 9,691,876'Enhanced gate replacement process for high-K metal gate technology'2017 9,691,969'Semiconductor integrated circuit and method of making the same'2017 9,685,395'Wiring layout having differently shaped vias'2017 9,679,979'Semiconductor structure for flash memory cells and method of making same'2017 9,679,817'Semiconductor structures and methods of forming the same'2017 9,679,988'Polysilicon design for replacement gate technology'2017 9,679,909'Method for manufacturing a finger trench capacitor with a split-gate flash memory cell'2017 9,673,205'Embedded nonvolatile memory and forming method thereof'2017 9,673,194'Semiconductor arrangement and formation thereof'2017 9,666,790'Manufacturing techniques and corresponding devices for magnetic tunnel junction devices'2017 9,659,953'HKMG high voltage CMOS for embedded non-volatile memory'2017 9,634,243'Semiconductor structure and method of forming the same'2017 9,627,392'Method to improve floating gate uniformity for non-volatile memory devices'2017 9,620,620'Methods to stop contact metal from extruding into replacement gates'2017 9,620,421'Metal gate transistor, integrated circuits, systems, and fabrication methods thereof'2017 9,620,372'HK embodied flash memory and methods of forming the same'2017 9,607,121'Cascode CMOS structure'2017 9,595,443'Metal gate structure of a semiconductor device'2017 9,590,059'Interdigitated capacitor to integrate with flash memory'2017 9,583,591'Si recess method in HKMG replacement gate technology'2017 9,576,855'Device and methods for high-k and metal gate stacks'2017 9,577,051'Spacer structures of a semiconductor device'2017 9,570,539'Integration techniques for MIM or MIP capacitors with flash memory and/or high-Îº metal gate CMOS technology'2017 9,559,177'Memory devices and method of fabricating same'2017 9,543,153'Recess technique to embed flash memory in SOI technology'2017 9,536,888'Method to prevent oxide damage and residue contamination for memory device'2017 9,536,977'Vertical tunneling field-effect transistor cell and fabricating the same'2017 9,525,040'Method of fabricating hybrid impact-ionization semiconductor device'2016 9,515,069'Semiconductor die'2016 9,508,721'Metal gate structure of a CMOS semiconductor device'2016 9,502,514'Memory devices and method of forming same'2016 9,502,533'Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)'2016 9,502,466'Dummy bottom electrode in interconnect to reduce CMP dishing'2016 9,496,276'CMP fabrication solution for split gate memory embedded in HK-MG process'2016 9,484,352'Method for forming a split-gate flash memory cell device with a low power logic device'2016 9,484,351'Split gate memory device and method of fabricating the same'2016 9,478,633'Method and apparatus of forming ESD protection device'2016 9,472,636'Cost-effective gate replacement process'2016 9,466,714'Vertical tunneling field-effect transistor cell with coaxially arranged gate contacts and drain contacts'2016 9,455,344'Integrated circuit metal gate structure having tapered profile'2016 9,431,500'Integrated circuit device having defined gate spacing and method of designing and fabricating thereof'2016 9,431,413'STI recess method to embed NVM memory in HKMG replacement gate technology'2016 9,425,206'Boundary scheme for embedded poly-SiON CMOS or NVM in HKMG CMOS technology'2016 9,419,099'Method of fabricating spacers in a strained semiconductor device'2016 9,412,841'Method of fabricating a transistor using contact etch stop layers'2016 9,406,669'Method and structure for vertical tunneling field effect transistor and planar devices'2016 9,397,112'L-shaped capacitor in thin film storage technology'2016 9,390,927'Contact formation for split gate flash memory'2016 9,378,961'Methods of fabricating multiple gate stack compositions'2016 9,368,603'Contact for high-k metal gate device'2016 9,355,209'Revising layout design through OPC to reduce corner rounding effect'2016 9,349,742'Embedded memory and methods of forming the same'2016 9,349,655'Method for mechanical stress enhancement in semiconductor devices'2016 9,337,194'Semiconductor device and method of forming the same'2016 9,324,622'Semiconductor device and method of forming the same'2016 9,299,696'Semiconductor structure with suppressed STI dishing effect at resistor region'2016 9,287,279'Silicon nitride (SiN) encapsulating layer for silicon nanocrystal memory storage'2016 9,276,010'Dual silicide formation method to embed split gate flash memory in high-k metal gate (HKMG) technology'2016 9,263,396'Photo alignment mark for a gate last process'2016 9,252,224'Self-aligned insulated film for high-k metal gate device'2016 9,230,977'Embedded flash memory device with floating gate embedded in a substrate'2016 9,231,084'Method of forming laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain'2016 9,219,124'Metal gate semiconductor device'2015 9,219,125'Device and methods for high-k and metal gate stacks'2015 9,209,090'Method of forming a semiconductor die'2015 9,202,817'Semiconductor device and method for manufacturing the same'2015 9,196,611'Reduced substrate coupling for inductors in semiconductor devices'2015 9,190,326'Semiconductor device having a post feature and method of manufacturing the same'2015 9,190,484'Vertical tunneling field-effect transistor cell and fabricating the same'2015 9,184,252'Flash memory embedded with HKMG technology'2015 9,159,842'Embedded nonvolatile memory'2015 9,159,826'Vertical tunneling field-effect transistor cell and fabricating the same'2015 9,153,581'Vertical tunneling field-effect transistor cell and fabricating the same'2015 9,147,736'High-K film apparatus and method'2015 9,142,414'CMOS devices with metal gates and methods for forming the same'2015 9,136,393'HK embodied flash memory and methods of forming the same'2015 9,129,823'Silicon recess ETCH and epitaxial deposit for shallow trench isolation (STI)'2015 9,123,745'Device with a vertical gate structure'2015 9,117,894'Contact etch stop layers of a field effect transistor'2015 9,117,840'Method of fabricating spacers in a strained semiconductor device'2015 9,111,780'Structure and method for vertical tunneling field effect transistor with leveled source and drain'2015 9,105,692'Method of fabricating an interconnection structure in a CMOS comprising a step of forming a dummy electrode'2015 9,099,467'E-fuse structure design in electrical programmable redundancy for embedded memory circuit'2015 9,082,651'Memory devices and method of forming same'2015 9,082,630'Semiconductor device and fabricating method thereof'2015 9,076,672'Cost-effective gate replacement process'2015 9,070,623'Controlling gate formation for high density cell layout'2015 9,070,784'Metal gate structure of a CMOS semiconductor device and method of forming the same'2015 9,059,310'SRAM devices utilizing strained-channel transistors and methods of manufacture'2015 9,059,022'Semiconductor structures and methods of forming the same'2015 9,054,025'Process for controlling shallow trench isolation step height'2015 9,048,335'Method of fabricating multiple gate stack compositions'2015 9,029,940'Vertical tunneling field-effect transistor cell'2015 9,006,860'Metal gate features of semiconductor die'2015 9,000,533'Device and methods for high-K and metal gate stacks'2015 8,981,495'Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain'2015 8,981,562'Wiring layout having differently shaped vias'2015 8,981,530'Semiconductor device and method of forming the same'2015 8,969,949'Structure and method for static random access memory device of vertical tunneling field effect transistor'2015 8,970,015'Method for protecting a gate structure during contact formation'2015 8,969,972'Modifying work function in PMOS devices by counter-doping'2015 8,940,596'Method of making structure having a gate stack'2015 8,932,951'Dishing-free gap-filling with multiple CMPs'2015 8,890,260'Polysilicon design for replacement gate technology'2014 8,889,501'Methods for forming MOS devices with raised source/drain regions'2014 8,883,594'Vertical tunneling field-effect transistor cell and fabricating the same'2014 8,871,625'Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers'2014 8,853,753'Contact for high-k metal gate device'2014 8,846,510'Method and structure to boost MOSFET performance and NBTI'2014 8,847,321'Cascode CMOS structure'2014 8,836,035'Method and apparatus for reducing gate resistance'2014 8,835,294'Method for improving thermal stability of metal gate'2014 8,828,838'Large dimension device and method of manufacturing same in gate last process'2014 8,803,202'Layout methods of integrated circuits having unit MOS devices'2014 RE045060'Spacer structures of a semiconductor device'2014 8,772,147'Spacer structures of a semiconductor device'2014 8,765,600'Contact structure for reducing gate resistance and method of making the same'2014 8,754,470'Vertical tunneling field-effect transistor cell and fabricating the same'2014 8,735,235'Integrated circuit metal gate structure and method of fabrication'2014 8,728,900'Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors'2014 8,716,103'Semiconductor device and method of fabricating same'2014 8,697,517'Reduced substrate coupling for inductors in semiconductor devices'2014 8,680,597'Method and apparatus for improving gate contact'2014 8,680,619'Method of fabricating hybrid impact-ionization semiconductor device'2014 8,669,153'Integrating a first contact structure in a gate last process'2014 8,664,079'Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate'2014 8,648,446'Method for protecting a gate structure during contact formation'2014 8,629,515'Metal gate semiconductor device'2014 8,629,050'E-fuse structure design in electrical programmable redundancy for embedded memory circuit'2014 8,624,295'SRAM devices utilizing strained-channel transistors and methods of manufacture'2014 8,614,484'High voltage device with partial silicon germanium epi source/drain'2013 8,609,484'Method for forming high-K metal gate device'2013 8,598,656'Method and apparatus of forming ESD protection device'2013 8,598,630'Photo alignment mark for a gate last process'2013 8,587,074'Device having a gate stack'2013 8,586,428'Interconnection structure for N/P metal gates'2013 8,563,389'Integrated circuit having silicon resistor and method of forming the same'2013 8,557,659'Spacer structures of a semiconductor device'2013 8,558,278'Strained transistor with optimized drive current and method of forming'2013 8,552,522'Dishing-free gap-filling with multiple CMPs'2013 8,524,570'Method and apparatus for improving gate contact'2013 8,525,270'Structures and methods to stop contact metal from extruding into replacement gates'2013 8,497,169'Method for protecting a gate structure during contact formation'2013 8,476,126'Gate stack for high-K/metal gate last process'2013 8,461,654'Spacer shape engineering for void-free gap-filling process'2013 8,461,621'Method and apparatus of forming bipolar transistor device'2013 8,461,629'Semiconductor device and method of fabricating same'2013 8,450,834'Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers'2013 8,450,216'Contact etch stop layers of a field effect transistor'2013 8,450,161'Method of fabricating a sealing structure for high-k metal gate'2013 8,394,692'Integrating a first contact structure in a gate last process'2013 8,390,072'Chemical mechanical polishing (CMP) method for gate last process'2013 8,389,359'Method for forming low resistance and uniform metal gate'2013 8,378,428'Metal gate structure of a semiconductor device'2013 8,373,199'Semiconductor device having a SiGe feature and a metal gate stack'2013 8,372,706'Semiconductor device fabrication method including hard mask and sacrificial spacer elements'2013 8,368,136'Integrating a capacitor in a metal gate last process'2013 8,368,170'Reducing device performance drift caused by large spacings between active regions'2013 8,367,515'Hybrid shallow trench isolation for high-k metal gate device improvement'2013 8,361,866'Modifying work function in PMOS devices by counter-doping'2013 8,349,678'Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain'2013 8,349,680'High-k metal gate CMOS patterning method'2013 8,349,732'Implanted metal silicide for semiconductor device'2013 8,343,867'Method for main spacer trim-back'2013 8,334,572'Resistive device for high-k metal gate technology'2012 8,329,521'Method and device with gate structure formed over the recessed top portion of the isolation structure'2012 8,324,046'Poly resistor and poly eFuse design for replacement gate technology'2012 8,304,831'Method and apparatus of forming a gate'2012 8,304,840'Spacer structures of a semiconductor device'2012 8,304,842'Interconnection structure for N/P metal gates'2012 8,304,839'Poly resistor and poly eFuse design for replacement gate technology'2012 8,294,216'Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors'2012 8,286,114'3-dimensional device design layout'2012 8,258,584'Offset gate semiconductor device'2012 8,237,201'Layout methods of integrated circuits having unit MOS devices'2012 8,237,227'Dummy gate structure for gate last process'2012 8,216,888'Eliminating poly uni-direction line-end shortening using second cut'2012 8,202,776'Method for protecting a gate structure during contact formation'2012 8,193,586'Sealing structure for high-K metal gate'2012 8,183,644'Metal gate structure of a CMOS semiconductor device'2012 8,173,491'Standard cell architecture and methods with variable design rules'2012 8,153,498'Downsize polysilicon height for polysilicon resistor integration of replacement gate process'2012 8,143,131'Method of fabricating spacers in a strained semiconductor device'2012 8,143,137'Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate'2012 8,125,051'Device layout for gate last process'2012 8,105,929'Gate control and endcap improvement'2012 8,105,891'Method for tuning a work function of high-K metal gate devices'2012 8,093,120'Integrating a first contact structure in a gate last process'2012 8,093,116'Method for N/P patterning in a gate last process'2012 8,058,119'Device scheme of HKMG gate-last process'2011 8,048,752'Spacer shape engineering for void-free gap-filling process'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (174)· patent assignee history

2003–2015Based in Austin, TX, US· patent location history

2008–2018Based in Hsinchu, TW· patent location history

2011–2016Patents assigned to THEI KONG-BENG (43)· patent assignee history

2011–2015Patents assigned to CHUANG HARRY (38)· patent assignee history

2012–2018Patents assigned to ZHU MING (30)· patent assignee history

2013–2021Based in Singapore, SG· patent location history

2014–2020Based in Crescent, SG· patent location history

2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (162)· patent assignee history

2015–2020Based in Zhubei City, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG	174	2003–2016
TAIWAN SEMICONDUCTOR MFG CO LTD	162	2015–2021
THEI KONG-BENG	43	2011–2016
CHUANG HARRYself	38	2011–2015
ZHU MING	30	2012–2018

Locations

Location	Patents	Span
Singapore, SG	121	2013–2021
Hsinchu, TW	98	2008–2018
Zhubei City, TW	44	2015–2020
Austin, Texas, US	30	2003–2015
Crescent, SG	16	2014–2020