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Inventor

Muhammad Rahman

Inventor
Clifton Park, NY, US

Overview

2→
Patents
2018–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices25%
H04NPictorial communication, e.g. television13%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
PatentTitleYear
10,347,748Methods of forming source/drain regions on FinFET devices201910,002,895Apparatus and methods for buried channel transfer gate2018

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2018Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (1)· patent assignee history
2018Based in San Jose, CA, US· patent location history
2019Patents assigned to GLOBALFOUNDRIES INC (1)· patent assignee history
2019Based in Clifton Park, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GLOBALFOUNDRIES INC12019
SEMICONDUCTOR COMPONENTS IND LLC12018
Locations
LocationPatentsSpan
Clifton Park, New York, US12019
San Jose, California, US12018