LexDanaLexDanabeta
Inventor

Shoji Shukuri

Inventor
Koganei, JP

Overview

104→
Patents
1987–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 104 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices25%
H10DInorganic electric semiconductor devices21%
G11CStatic stores19%
B82YSpecific uses or applications of nanostructures10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H01LSemiconductor devices3%
C04BLime, magnesia1%
H01JElectric discharge tubes or discharge lamps1%
PatentTitleYear
10,332,901Semiconductor integrated circuit device and a method of manufacturing the same201910,014,312Semiconductor integrated circuit device and a method of manufacturing the same20189,735,168'Semiconductor integrated circuit device and a method of manufacturing the same'20179,502,430'Semiconductor integrated circuit device and a method of manufacturing the same'20169,324,723'Semiconductor integrated circuit device and a method of manufacturing the same'20169,093,320'Semiconductor integrated circuit device and a method of manufacturing the same'20158,907,404'Semiconductor integrated circuit device and a method of manufacturing the same'20148,897,077'Nonvolatile semiconductor memory device'20148,687,455'Nonvolatile semiconductor memory'20148,674,432'Semiconductor integrated circuit device and a method of manufacturing the same'20148,507,975'Semiconductor integrated circuit device and a method of manufacturing the same'20138,492,826'Non-volatile semiconductor memory device and manufacturing method thereof'20138,222,686'Semiconductor integrated circuit device and a method of manufacturing the same'20128,106,443'Non-volatile semiconductor memory device'20128,017,994'Nonvolatile semiconductor memory'20118,000,137'Nonvolatile semiconductor memory device and usage method thereof'20117,952,135'Semiconductor integrated circuit device and a method of manufacturing the same'20117,924,615'Nonvolatile semiconductor memory device'20117,807,530'Semiconductor integrated circuit device and a method of manufacturing the same'20107,701,778'Nonvolatile semiconductor memory device'20107,585,731'Semiconductor integrated circuit device and its manufacturing method'20097,573,742'Nonvolatile semiconductor memory'20097,550,809'Semiconductor integrated circuit device having deposited layer for gate insulation'20097,547,602'Semiconductor integrated circuit device and its manufacturing method'20097,544,988'Semiconductor integrated circuit device and a method of manufacturing the same'20097,525,145'Semiconductor integrated circuit device and a method of manufacturing the same'20097,515,479'Nonvolatile semiconductor storage device and method for writing therein'20097,463,517'Semiconductor integrated circuit and nonvolatile memory element'20087,428,167'Semiconductor integrated circuit and nonvolatile memory element'20087,405,971'Semiconductor device'20087,402,873'Semiconductor integrated circuit device having deposited layer for gate insulation'20087,326,616'Semiconductor integrated circuit device and a method of manufacturing the same'20087,289,361'Semiconductor integrated circuit and nonvolatile memory element'20077,268,401'Semiconductor integrated circuit device having deposited layer for gate insulation'20077,166,893'Semiconductor integrated circuit device'20077,149,113'Semiconductor integrated circuit device'20067,119,406'Semiconductor integrated circuit device having deposited layer for gate insulation'20067,067,373'Semiconductor integrated circuit device and a method of manufacturing the same'20067,067,875'Semiconductor integrated circuit device and its manufacturing method'20067,045,848'Semiconductor integrated circuit device and a method of manufacturing the same'20067,042,764'Semiconductor integrated circuit and nonvolatile memory element'20067,031,217'Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device'20067,026,679'Semiconductor integrated circuit device and the process of manufacturing the same having poly-silicon plug, wiring trenches and bit lines formed in the wiring trenches having a width finer than a predetermined size'20067,023,062'Semiconductor integrated circuit device having deposited layer for gate insulation'20067,015,090'Method of manufacturing a semiconductor device having trenches for isolation and capacitor formation trenches'20066,967,888'Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device'20056,941,505'Data processing system and data processing method'20056,908,837'Method of manufacturing a semiconductor integrated circuit device including a gate electrode having a salicide layer thereon'20056,906,954'Semiconductor integrated circuit and nonvolatile memory element'20056,894,944'Semiconductor integrated circuit device'20056,873,555'Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrate circuit device'20056,867,092'Semiconductor integrated circuit device and the process of manufacturing the same for reducing the size of a memory cell by making the width of a bit line than a predetermined minimum size'20056,791,881'Semiconductor device'20046,781,893'Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrate circuit device'20046,771,538'Semiconductor integrated circuit and nonvolatile memory element'20046,770,527'Semiconductor integrated circuit device and method of manufacturing the same'20046,762,449'SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND THE PROCESS OF MANUFACTURING THE SAME HAVING POLY-SILICON PLUG, WIRING TRENCHES AND BIT LINES FORMED IN THE WIRING TRENCHES HAVING A WIDTH FINER THAN A PREDETERMINED SIZE'20046,724,657'Semiconductor device with improved latch arrangement'20046,661,712'Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device'20036,646,313'Semiconductor integrated circuit device and having deposited layer for gate insulation'20036,628,549'Semiconductor device'20036,617,632'Semiconductor device and a method of manufacturing the same'20036,614,684'Semiconductor integrated circuit and nonvolatile memory element'20036,611,458'Semiconductor integrated circuit device'20036,576,512'Method of manufacturing an EEPROM device'20036,569,742'Method of manufacturing semiconductor integrated circuit device having silicide layers'20036,559,012'Method for manufacturing semiconductor integrated circuit device having floating gate and deposited film'20036,545,311'Semiconductor integrated circuit and nonvolatile memory element'20036,541,333'Semiconductor integrated circuit device and method of manufacturing the same'20036,542,414'Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device'20036,538,929'Semiconductor integrated circuit device, memory module and storage device'20036,528,839'Semiconductor integrated circuit and nonvolatile memory element'20036,529,407'Semiconductor device with improved latch arrangement'20036,466,482'Semiconductor device'20026,449,197'Semiconductor integrated circuit device, memory module, storage device'20026,438,029'Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device'20026,406,958'Method of manufacturing nonvolatile semiconductor memory device'20026,387,744'Process for manufacturing semiconductor integrated circuit device'20026,376,316'Method for manufacturing semiconductor integrated circuit device having deposited layer for gate insulation'20026,341,090'Method for repairing semiconductor integrated circuit device'20026,324,103'Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device'20016,287,914'Method of forming a MISFET device with a bit line completely surrounded by dielectric'20016,211,546'Method of manufacturing nonvolatile semiconductor memory device'20016,211,003'Semiconductor integrated circuit device and process for manufacturing the same'20016,201,733'Semiconductor integrated circuit device, memory module and storage device'20016,121,086'Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device'20006,069,038'Method of manufacturing a semiconductor integrated circuit device'20005,932,909'Nonvolatile semiconductor memory device'19995,814,543'Method of manufacturing a semicondutor integrated circuit device having nonvolatile memory cells'19985,672,529'Method of manufacturing nonvolatile semiconductor memory device'19975,523,965'Semiconductor memory device and method of manufacturing same'19965,506,156'Method of fabricating bipolar transistor having high speed and MOS transistor having small size'19965,355,330'Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode'19945,270,232'Process for fabricating field effect transistor'19935,266,815'Semiconductor integrated circuit device having superconductive layer and isolation member with nitride isolation'19935,144,394'Semiconductor device and method for fabricating same'19925,132,752'Field effect transistor'19925,113,072'Device having superlattice structure, and method of and apparatus for manufacturing the same'19925,072,286'Semiconductor memory device having memory cells including IG FETs in a symmetrical arrangement'19915,055,904'Semiconductor device'19915,038,193'Semiconductor integrated circuit device'19914,983,540'Method of manufacturing devices having superlattice structures'19914,808,546'SOI process for forming a thin film transistor using solid phase epitaxy'19894,716,127'Method of implanting spatially controlled P-N junctions by focused ion beams containing at least two species'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–2006Patents assigned to HITACHI LTD (49)· patent assignee history
1987–2015Based in Koganei, JP· patent location history
2002–2019Based in Tokyo, JP· patent location history
2004–2009Patents assigned to RENESAS TECH CORP (30)· patent assignee history
2009–2014Patents assigned to GENUSION INC (10)· patent assignee history
2009–2014Based in Hyogo, JP· patent location history
2010–2019Patents assigned to RENESAS ELECTRONICS CORP (12)· patent assignee history
2011Based in Amagasaki, JP· patent location history
2012–2014Patents assigned to SHUKURI SHOJI (5)· patent assignee history
2016Based in Joganei, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD491987–2006
RENESAS TECH CORP302004–2009
RENESAS ELECTRONICS CORP122010–2019
GENUSION INC102009–2014
SHUKURI SHOJIself52012–2014
Locations
LocationPatentsSpan
Koganei, JP861987–2015
Hyogo, JP92009–2014
Tokyo, JP62002–2019
Joganei, JP12016
Amagasaki, JP12011