Inventor

Moses Ho

Inventor
Campbell, CA, US

Overview

19→
Patents
2010–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices59%
H01LSemiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,686,035Nano-tube MOSFET technology and devices202010,121,857Nano-tube MOSFET technology and devices20189,647,059'Manufacturing methods for accurately aligned and self-balanced superjunction devices'20179,093,521'Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout'20159,024,375'Nano-tube MOSFET technology and devices'20158,969,953'Method of forming a self-aligned charge balanced power DMOS'20158,785,306'Manufacturing methods for accurately aligned and self-balanced superjunction devices'20148,519,476'Method of forming a self-aligned charge balanced power DMOS'20138,471,332'Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout'20138,263,482'Nano-tube MOSFET technology and devices'20128,105,895'Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout'20128,008,151'Shallow source MOSFET'20117,952,139'Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout'20117,943,989'Nano-tube MOSFET technology and devices'20117,892,924'Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device'20117,875,541'Shallow source MOSFET'20117,863,995'Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS'20117,683,369'Structure for measuring body pinch resistance of high density trench MOSFET array'20107,667,264'Shallow source MOSFET'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2020Patents assigned to ALPHA & OMEGA SEMICONDUCTOR (19)· patent assignee history
2010–2020Based in Campbell, CA, US· patent location history
2012–2017Patents assigned to BHALLA ANUP (7)· patent assignee history
2012–2017Patents assigned to HO MOSES (7)· patent assignee history
2012–2017Patents assigned to CHEN JOHN (5)· patent assignee history
2012–2015Patents assigned to GUAN LINGPENG (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ALPHA & OMEGA SEMICONDUCTOR192010–2020
BHALLA ANUP72012–2017
HO MOSESself72012–2017
CHEN JOHN52012–2017
GUAN LINGPENG42012–2015
Locations
LocationPatentsSpan
Campbell, California, US192010–2020