Inventor
DEXIN KONG
Inventor
US
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for21%
H10BElectronic memory devices20%
H01LSemiconductor devices16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10DInorganic electric semiconductor devices7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G11CStatic stores5%
G06NComputing arrangements based on specific computational models4%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
12,453,293Redundant bottom pad and sacrificial via contact for process induced RRAM forming202512,310,267ReRAM module with intermediate electrode202512,310,262Phase change memory with encapsulated phase change element202512,256,653PCM cell with nanoheater surrounded with airgaps202512,225,833Oxide-based resistive memory having a plasma-exposed bottom electrode202512,165,023Measuring local CD uniformity using scatterometry and machine learning202412,107,008Maskless alignment scheme for BEOL memory array manufacturing202412,033,061Capacitor-based synapse network structure with metal shielding between outputs202411,956,975BEOL fat wire level ground rule compatible embedded artificial intelligence integration202411,937,522Confining filament at pillar center for memory devices202411,879,131Use of ZmSBP12 gene in regulation of drought resistance, plant height, and ear height of 202411,877,524Nanotip filament confinement202411,856,878High-density resistive random-access memory array with self-aligned bottom electrode contact202311,812,675Filament confinement in resistive random access memory202311,751,492Embedded memory pillar202311,682,582Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors202311,665,987Integrated switch using stacked phase change materials202311,647,680Oxide-based resistive memory having a plasma-exposed bottom electrode202311,430,513Non-volatile memory structure and method for low programming voltage for cross bar array202211,362,093Co-integration of non-volatile memory on gate-all-around field effect transistor202211,270,768Failure prevention of chip power network202211,239,421Embedded BEOL memory device with top electrode pillar202211,221,359Determining device operability via metal-induced layer exchange202211,199,505Machine learning enhanced optical-based screening for in-line wafer testing202111,195,754Transistor with reduced gate resistance and improved process margin of forming self-aligned contact202111,195,755Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors202111,189,724Method of forming a top epitaxy source/drain structure for a vertical transistor202111,183,636Techniques for forming RRAM cells202111,177,319RRAM device with spacer for electrode isolation2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to IBM (28)· patent assignee history
2021–2025Based in US· patent location history
2024Patents assigned to BIOTECHNOLOGY RES INSTITUTE CHINESE ACADEMY OF AGRICULTURAL SCIENCES (1)· patent assignee history
2024Patents assigned to NOVA LTD (1)· patent assignee history
2024Patents assigned to UNIV SOUTH CHINA AGRICULT (1)· patent assignee history
2024Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 28 | 2021–2025 |
| BIOTECHNOLOGY RES INSTITUTE CHINESE ACADEMY OF AGRICULTURAL SCIENCES | 1 | 2024 |
| NOVA LTD | 1 | 2024 |
| UNIV SOUTH CHINA AGRICULT | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 28 | 2021–2025 |
| CN | 1 | 2024 |