Inventor
Martin Knaipp
Inventor
Unterpremstatten, AT
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
H01LSemiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
PatentTitleYear
10,283,635Field effect transistor device with separate source and body contacts and method of producing the device20199,954,118Method of producing a high-voltage semiconductor drift device20189,748,408'High-voltage semiconductor device and method of producing the same'20179,722,047'Method of producing a high-voltage transistor'20179,685,437'High-voltage transistor device and production method'20179,362,395'High-voltage field-effect transistor and method of making the same'20169,093,527'High-voltage transistor and component containing the latter'20159,076,676'High-voltage transistor device and production method'20159,076,880'Asymmetric high-voltage JFET and manufacturing process'20158,963,243'P-channel LDMOS transistor and method of producing a p-channel LDMOS transistor'20158,399,937'Semiconductor body and method for the design of a semiconductor body with a connecting line'20138,227,318'Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation'20128,212,318'High-voltage transistor with improved high stride performance'20128,129,782'High-voltage transistor and method for its manufacture'20127,977,197'Method for fabricating a transistor with reliable source doping'20117,898,030'High-voltage NMOS-transistor and associated production method'20117,888,234'Method for manufacturing a semiconductor body with a trench and semiconductor body with a trench'20117,820,342'Multiple mask and method for producing differently doped regions'20107,781,809'High voltage depletion layer field effect transistor'20107,663,203'High-voltage PMOS transistor'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2013Patents assigned to AUSTRIAMICROSYSTEMS AG (9)· patent assignee history
2010–2017Based in Unterpremstatten, AT· patent location history
2012–2017Patents assigned to KNAIPP MARTIN (8)· patent assignee history
2012–2015Patents assigned to ROEHRER GEORG (4)· patent assignee history
2012–2015Patents assigned to PARK JONG MUN (2)· patent assignee history
2012–2018Based in Unterpremstaetten, AT· patent location history
2015–2019Patents assigned to AMS AG (10)· patent assignee history
2019Based in Premstaetten, AT· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AMS AG | 10 | 2015–2019 |
| AUSTRIAMICROSYSTEMS AG | 9 | 2010–2013 |
| KNAIPP MARTINself | 8 | 2012–2017 |
| ROEHRER GEORG | 4 | 2012–2015 |
| PARK JONG MUN | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Unterpremstatten, AT | 13 | 2010–2017 |
| Unterpremstaetten, AT | 6 | 2012–2018 |
| Premstaetten, AT | 1 | 2019 |