Inventor
Shiro Hino
Inventor
Tokyo, JP
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices34%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
F02CGas-turbine plants1%
F05DIndexing scheme for aspects relating to non-positive-displacement machines or engines, gas-turbines or jet-propulsion plants1%
F17CVessels for containing or storing compressed, liquefied or solidified gases1%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%
H02PControl or regulation of electric motors, electric generators or dynamo-electric converters1%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications1%
PatentTitleYear
11,049,931Semiconductor device202111,049,963Silicon carbide semiconductor device and power converter202110,991,822Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same202110,707,341Semiconductor device202010,665,713Silicon carbide semiconductor device202010,665,679Silicon carbide semiconductor device and method for manufacturing same202010,559,653Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device202010,559,652Semiconductor device202010,475,920Semiconductor device and semiconductor device manufacturing method201910,374,075Silicon carbide semiconductor device and manufacturing method for the same201910,128,370Semiconductor device201810,020,367Silicon carbide semiconductor device20189,985,093Trench-gate type semiconductor device and manufacturing method therefor20189,954,072Silicon-carbide semiconductor device and manufacturing method thereof20189,825,164'Silicon carbide semiconductor device and manufacturing method for same'20179,614,029'Trench-gate type semiconductor device and manufacturing method therefor'20179,577,086'Semiconductor device'20179,525,057'Semiconductor device'20169,362,391'Silicon carbide semiconductor device and method of manufacturing the same'20169,324,782'Semiconductor device'20169,293,572'Power semiconductor device'20169,224,860'Trench-gate type semiconductor device and manufacturing method therefor'20159,214,458'Semiconductor device'20159,190,468'Semiconductor device'20159,093,361'Semiconductor device'20159,076,761'Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device'20159,006,819'Power semiconductor device and method for manufacturing same'20158,492,836'Power semiconductor device'20137,603,840'LNG power plant'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009Based in Yokohama, JP· patent location history
2013–2021Patents assigned to MITSUBISHI ELECTRIC CORP (28)· patent assignee history
2013–2016Patents assigned to HINO SHIRO (10)· patent assignee history
2013–2016Patents assigned to MIURA NARUHISA (9)· patent assignee history
2013–2016Patents assigned to FURUKAWA AKIHIKO (7)· patent assignee history
2013–2021Based in Tokyo, JP· patent location history
2015–2016Patents assigned to IMAIZUMI MASAYUKI (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 28 | 2013–2021 |
| HINO SHIROself | 10 | 2013–2016 |
| MIURA NARUHISA | 9 | 2013–2016 |
| FURUKAWA AKIHIKO | 7 | 2013–2016 |
| IMAIZUMI MASAYUKI | 6 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 28 | 2013–2021 |
| Yokohama, JP | 1 | 2009 |