Inventor
CHEN-HAO CHIANG
Inventor
TW
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10DInorganic electric semiconductor devices16%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
B82YSpecific uses or applications of nanostructures5%
G02BOptical elements, systems or apparatus5%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
G06FElectric digital data processing2%
Y02PClimate change mitigation technologies in the production or processing of goods2%
PatentTitleYear
12,439,709Image sensor with diffusion barrier structure202512,369,352Thin film transfer using substrate with etch stop layer and diffusion barrier layer202512,328,965In-situ cap for germanium photodetector202512,327,723Passive cap for germanium-containing layer202512,308,230High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same202512,136,679Semiconductor device comprising a photodetector with reduced dark current202412,074,036Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer202411,984,486Method of implanting dopants into a group III-nitride structure and device formed202411,949,030In-situ cap for germanium photodetector202411,804,531Thin film transfer using substrate with etch stop layer and diffusion barrier layer202311,749,762Semiconductor device comprising a photodetector with reduced dark current202311,594,606Method of implanting dopants into a group III-nitride structure and device formed202311,551,927High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same202311,360,593Touch panel2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022Patents assigned to AU OPTRONICS CORP (1)· patent assignee history
2022–2025Based in TW· patent location history
2023–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (13)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 13 | 2023–2025 |
| AU OPTRONICS CORP | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 14 | 2022–2025 |