Inventor

Ru-Shang Hsiao

Inventor

Jhubei City, TW

Overview

41→

Patents

2010–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 41 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices32%

H01LSemiconductor devices31%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%

G06TImage data processing or generation, in general1%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution1%

Y02PClimate change mitigation technologies in the production or processing of goods1%

PatentTitleYear

10,903,336Semiconductor device and method of manufacturing the same2021 10,847,636Methods for forming semiconductor structure2020 10,680,103Method of forming semiconductor device with gate2020 10,651,041Semiconductor structure and manufacturing method thereof2020 10,510,877Semiconductor structure2019 10,312,092Semiconductor structure and manufacturing method thereof2019 10,297,691Method for forming semiconductor device with P/N stacked layers2019 10,153,278Fin-type field effect transistor structure and manufacturing method thereof2018 10,062,603Air-gap scheme for BEOL process2018 10,056,455Semiconductor device and method of fabricating the same2018 10,008,501Sandwich EPI channel for device enhancement2018 9,997,633Semiconductor devices, FinFET devices and methods of forming the same2018 9,985,122Semiconductor structures2018 9,929,268'Fin field effect transistor and method for fabricating the same'2018 9,893,150'Structure and method for semiconductor device'2018 9,892,924'Semiconductor structure and manufacturing method thereof'2018 9,842,932'FinFET with P/N stacked fins and method for fabricating the same'2017 9,728,637'Mechanism for forming semiconductor device with gate'2017 9,634,122'Device boost by quasi-FinFET'2017 9,570,561'Modified channel position to suppress hot carrier injection in FinFETs'2017 9,564,487'Dual vertical channel'2017 9,558,955'Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stack'2017 9,543,399'Device having sloped gate profile and method of manufacture'2017 9,490,254'Fin sidewall removal to enlarge epitaxial source/drain volume'2016 9,466,670'Sandwich epi channel for device enhancement'2016 9,449,811'Air-gap scheme for BEOL process'2016 9,318,371'Shallow trench isolation structure'2016 9,299,734'Methods of stress engineering to reduce dark current of CMOS image sensors'2016 9,287,139'Re-crystallization for boosting stress in MOS device'2016 9,281,215'Mechanism for forming gate'2016 9,252,233'Air-gap offset spacer in FinFET structure'2016 9,246,002'Structure and method for semiconductor device'2016 9,217,917'Three-direction alignment mark'2015 9,209,304'N/P MOS FinFET performance enhancement by specific orientation surface'2015 9,159,812'Fin sidewall removal to enlarge epitaxial source/drain volume'2015 8,778,717'Local oxidation of silicon processes with reduced lateral oxidation'2014 8,546,860'Stress engineering to reduce dark current of CMOS image sensors'2013 8,389,377'Sensor element isolation in a backside illuminated image sensor'2013 8,216,905'Stress engineering to reduce dark current of CMOS image sensors'2012 8,158,474'Semiconductor device with localized stressor'2012 7,825,477'Semiconductor device with localized stressor'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (10)· patent assignee history

2010–2021Based in Jhubei City, TW· patent location history

2012–2014Patents assigned to HSIAO RU-SHANG (5)· patent assignee history

2012–2014Patents assigned to CHENG NAI-WEN (4)· patent assignee history

2012–2014Patents assigned to LIN CHUNG-TE (4)· patent assignee history

2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (31)· patent assignee history

2015–2020Based in Hsinchu County, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	31	2015–2021
TAIWAN SEMICONDUCTOR MFG	10	2010–2016
HSIAO RU-SHANGself	5	2012–2014
CHENG NAI-WEN	4	2012–2014
LIN CHUNG-TE	4	2012–2014

Locations

Location	Patents	Span
Jhubei City, TW	27	2010–2021
Hsinchu County, TW	14	2015–2020