Inventor

Fumihiko Sato

Inventor
Tokyo, JP

Overview

67→
Patents
1976–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 67 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices18%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
G02BOptical elements, systems or apparatus4%
H03KPulse technique4%
H04NPictorial communication, e.g. television3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
LOC163%
A61KPreparations for medical, dental or toiletry purposes2%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for2%
C07DHeterocyclic compounds2%
PatentTitleYear
10,809,783Power source system202010,750,631Head-mounted display202010,477,711Head-mounted display201910,251,292Head-mounted display2019D0836158Light shield2018D0836159Light shield2018D0829270Light shield2018D0824991Light shield201810,008,496Method for forming semiconductor device having continuous fin diffusion break20189,982,080Photocurable composition and hard coating agent20189,703,103'Head-mounted display'20178,993,280'Method for producing alkaloids'20158,183,285'Therapeutic agent for irritable bowel syndrome and methods thereof'20127,907,744'Capacitive vibration sensor and method for manufacturing same'20117,823,081'User interface system having a separate menu flow software object and operation software object'20107,410,981'Prodrugs of imidazole derivatives, for use as proton pump inhibitors in the treatment of e.g. peptic ulcers'20087,390,039'Bumper absorber for protecting pedestrians'20087,226,097'Bumper absorber for pedestrain protection'20077,155,103'Optical wave guide and method for producing the same'20067,099,769'Misfire detector for detecting misfire of internal combustion engine'20067,007,543'Air-fuel ratio sensor'20066,883,239'Hair trimming device'20056,739,177'Combustible-gas sensor, diagnostic device for intake-oxygen concentration sensor, and air-fuel ratio control device for internal combustion engines'20046,680,522'Semiconductor device with reduced electrical variation'20046,667,749'User interface system having a separate menu flow software object and operation software object'20036,436,781'High speed and low parasitic capacitance semiconductor device and method for fabricating the same'20026,424,176'Logic circuits used for address decoding'20026,230,189'Apparatus and method for an HTTP server capable of connecting facsimile apparatuses and data terminals'20016,130,560'Sense amplifier circuit'20006,125,462'Testing mechanism in a semiconductor integrated circuit device using an external clock signal and a non-connection pin input signal'20006,049,098'Bipolar transistor having an emitter region formed of silicon carbide'20006,020,245'Method of manufacturing semiconductor device where characteristics can be measured at manufacture'20005,840,613'Fabrication method for semiconductor device'19985,804,989'Logic circuit for a semiconductor memory device'19985,801,313'Capacitive sensor'19985,798,561'Bipolar transistor with polysilicon base'19985,766,999'Method for making self-aligned bipolar transistor'19985,723,378'Fabrication method of semiconductor device using epitaxial growth process'19985,698,890'Semiconductor device having bipolar transistor free from leakage current across thin base region'19975,693,979'Semiconductor device'19975,668,396'Bipolar transistor having thin intrinsic base with low base resistance and method for fabricating the same'19975,664,453'Hollow extruder die for extruding a hollow member of a zinc-containing aluminum alloy'19975,599,723'Method for manufacturing bipolar transistor having reduced base-collector parasitic capacitance'19975,519,249'Vertical type bipolar transistor'19965,504,018'Process of fabricating bipolar transistor having epitaxially grown base layer without deterioration of transistor characteristics'19965,500,554'Bipolar transistor having reduced base-collector capacitance while maintaining improved cut-off frequency'19965,432,104'Method for fabricating a vertical bipolar transistor with reduced parasitic capacitance between base and collector regions'19955,323,032'Dual layer epitaxtial base heterojunction bipolar transistor'19945,321,301'Semiconductor device'19945,317,205'Semiconductor integrated circuit and associated test method'19945,296,391'Method of manufacturing a bipolar transistor having thin base region'19945,285,088'High electron mobility transistor'19945,238,849'Method of fabricating semiconductor device'19935,146,295'Semiconductor light emitting device having a superlattice buffer layer'19925,136,259'Differential amplifier having a bias stabilizing circuit'19925,053,738'Magnetic leakage transformer'19915,042,045'Ridge-waveguide semiconductor laser'19915,034,677'Bias voltage supplying circuit'19914,761,219'Magnetron sputtering etching apparatus'19884,686,395'Current switching type logic circuit'19874,483,714'Nitrocellulose composition and process for production thereof'19844,447,601'Processed starch, process for preparing same and use of same in medicines'19844,383,111'Processed starch, process for preparing same and use of same in medicines'19834,039,415'Process for preparing insulation wire'19774,025,415'Apparatus for preparing an electrocoated product'19774,004,999'Process for preparing a coated product'19773,998,720'Apparatus for preparing insulation wire by electrodeposition'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1977Patents assigned to MITSUBISHI ELECTRIC CORP (4)· patent assignee history
1976–1977Based in Amagasaki, JP· patent location history
1983–1984Patents assigned to ASAHI CHEMICAL IND (3)· patent assignee history
1987–2002Patents assigned to NEC CORP (26)· patent assignee history
1987–2020Based in Tokyo, JP· patent location history
1991–2011Patents assigned to OMRON TATEISI ELECTRONICS CO (5)· patent assignee history
2001–2010Based in Machida, JP· patent location history
2004–2006Based in Susono, JP· patent location history
2006–2011Based in Tsuchiura, JP· patent location history
2017–2020Patents assigned to SONY INTERACTIVE ENTERTAINMENT INC (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NEC CORP261987–2002
SONY INTERACTIVE ENTERTAINMENT INC82017–2020
OMRON TATEISI ELECTRONICS CO51991–2011
MITSUBISHI ELECTRIC CORP41976–1977
ASAHI CHEMICAL IND31983–1984
Locations
LocationPatentsSpan
Tokyo, JP351987–2020
Amagasaki, JP41976–1977
Machida, JP32001–2010
Susono, JP32004–2006
Tsuchiura, JP22006–2011