Inventor
Cheng-Chih Huang
Inventor
Taipei, TW
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices43%
H10DInorganic electric semiconductor devices33%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B82YSpecific uses or applications of nanostructures3%
E02DFoundations3%
G03BApparatus or arrangements for taking photographs or for projecting or viewing them3%
PatentTitleYear
10,609,472Speaker module and projector20209,479,852'Speaker\'s fast installation assembly'20167,948,027'Embedded bit line structure, field effect transistor structure with the same and method of fabricating the same'20117,858,470'Memory device and fabrication thereof'20107,553,723'Manufacturing method of a memory device'20097,476,923'Memory device and fabrication thereof'20097,445,986'Memory cells with vertical transistor and capacitor and fabrication methods thereof'20087,342,274'Memory cells with vertical transistor and capacitor and fabrication methods thereof'20087,078,748'Multi-layer gate stack structure comprising a metal layer for a FET device, and method for fabricating the same'20067,074,700'Method for isolation layer for a vertical DRAM'20066,962,847'Method for forming a self-aligned buried strap in a vertical memory cell'20056,927,123'Method for forming a self-aligned buried strap in a vertical memory cell'20056,897,108'Process for planarizing array top oxide in vertical MOSFET DRAM arrays'20056,800,526'Method for manufacturing a self-aligned split-gate flash memory cell'20046,800,895'Vertical split gate flash memory cell and method for fabricating the same'20046,794,250'Vertical split gate flash memory cell and method for fabricating the same'20046,773,993'Method for manufacturing a self-aligned split-gate flash memory cell'20046,673,676'Method of fabricating a flash memory cell'20045,054,956'Conduit hole cover'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991Patents assigned to HUANG CHENG CHIH (1)· patent assignee history
1991Based in Kaohsiung, TW· patent location history
2004–2011Patents assigned to NANYA TECHNOLOGY CORP (16)· patent assignee history
2004–2011Based in Taipei, TW· patent location history
2006Based in Dresden, DE· patent location history
2008Based in Hsi Chih, TW· patent location history
2016Patents assigned to HIGH HIT ENTPR CO LTD (1)· patent assignee history
2016–2020Based in New Taipei, TW· patent location history
2020Patents assigned to QISDA CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NANYA TECHNOLOGY CORP | 16 | 2004–2011 |
| HIGH HIT ENTPR CO LTD | 1 | 2016 |
| HUANG CHENG CHIHself | 1 | 1991 |
| QISDA CORP | 1 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taipei, TW | 13 | 2004–2011 |
| New Taipei, TW | 2 | 2016–2020 |
| Hsi Chih, TW | 2 | 2008 |
| Dresden, DE | 1 | 2006 |
| Kaohsiung, TW | 1 | 1991 |