Inventor
Payman Aminzadeh
Inventor
Cupertino, CA, US
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G06Fprimary
G06FElectric digital data processing38%
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10BElectronic memory devices13%
PatentTitleYear
7,501,845'On-chip frequency degradation compensation'20097,394,274'On-chip frequency degradation compensation'20087,282,937'On-chip frequency degradation compensation'20076,707,120'Field effect transistor'20045,844,300'Single poly devices for monitoring the level and polarity of process induced charging in a MOS process'19985,827,769'Method for fabricating a transistor with increased hot carrier resistance by nitridizing and annealing the sidewall oxide of the gate electrode'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2009Patents assigned to INTEL CORP (6)· patent assignee history
1998–2004Based in Portland, OR, US· patent location history
2007–2009Based in Cupertino, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 6 | 1998–2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Cupertino, California, US | 3 | 2007–2009 |
| Portland, OR, US | 3 | 1998–2004 |