LexDanaLexDanabeta
Inventor

Hideaki Iwano

Inventor
Suwa, JP

Overview

20→
Patents
1987–1997
Patent span
Electricity
Primary field (CPC H)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light47%
H10HInorganic light-emitting semiconductor devices having potential barriers29%
G03GElectrography6%
B82YSpecific uses or applications of nanostructures3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
G11BInformation storage based on relative movement between record carrier and transducer3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
5,625,637'Surface emitting semiconductor laser and its manufacturing process'19975,623,509'Semiconductor laser and light-sensing device using the same'19975,621,750'Surface emission type semiconductor laser, method and apparatus for producing the same'19975,587,335'Method of making surface emission type semiconductor laser'19965,537,666'Surface emission type semiconductor laser'19965,436,876'Optical head and optical memory device'19955,436,922'Surface emission type semiconductor laser'19955,404,369'Surface emission type semiconductor laser'19955,375,133'Surface emitting semiconductor laser and method of manufacture'19945,356,832'Method of making surface emission type semiconductor laser'19945,317,584'Surface emission type semiconductor laser'19945,295,148'Surface emission type semiconductor laser'19945,194,119'Method of anisotropic dry etching of thin film semiconductors'19935,182,757'Surface emission type semiconductor laser'19935,181,221'Surface emission type semiconductor laser'19935,181,219'Surface emission type semiconductor laser'19935,179,566'Light-generating device and method of fabricating same'19934,856,013'Semiconductor laser having an active layer and cladding layer'19894,675,264'Electrophotographic sensitive member with amorphous Si barrier layer'19874,666,808'Amorphous silicon electrophotographic sensitive member'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987Patents assigned to KYOCERA CORP (2)· patent assignee history
1987Patents assigned to KAWAMURA TAKAO (1)· patent assignee history
1987Based in Kagoshima, JP· patent location history
1987Based in Kokubu, JP· patent location history
1989–1997Patents assigned to SEIKO EPSON CORP (17)· patent assignee history
1989–1997Based in Suwa, JP· patent location history
1993–1994Based in Nagano, JP· patent location history
1996Patents assigned to SEIKO EPSON COROPRATION (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEIKO EPSON CORP171989–1997
KYOCERA CORP21987
KAWAMURA TAKAO11987
SEIKO EPSON COROPRATION11996
Locations
LocationPatentsSpan
Suwa, JP161989–1997
Nagano, JP21993–1994
Kagoshima, JP11987
Kokubu, JP11987