Inventor

Junichi Wada

Inventor
Yokohama, JP

Overview

70→
Patents
1995–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 70 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10BElectronic memory devices6%
B60LPropulsion of electrically-propelled vehicles5%
H01LSemiconductor devices5%
Y02TClimate change mitigation technologies related to transportation5%
H10DInorganic electric semiconductor devices5%
H02JElectric power networks4%
H10NElectric solid-state devices not otherwise provided for4%
B62MRider propulsion of wheeled vehicles or sledges4%
PatentTitleYear
11,010,824Battery reservation device and battery reservation method202111,003,150Simulation method, recording medium wherein simulation program is stored, simulation device, and system202110,991,988Battery pack, and battery system comprising the same202110,974,788Battery pack, battery system comprising the same, and method for distinguishing use application of battery pack202110,946,750Charge/discharge control device, charge/discharge control system, and charge/discharge control method202110,919,410Charge/discharge control device, charge/discharge control system, and remaining battery capacity adjustment method202110,875,422Battery pack, and battery system comprising the same202010,763,122Method of manufacturing semiconductor device and etching mask202010,661,857Drive mode selection device and drive mode selection method202010,661,676Guide device, guide system, and guide method202010,650,444Battery reservation device and battery reservation method202010,643,272Battery reservation device202010,600,116Reservation management device, reservation management system, and reservation management method202010,597,114Drive mode selection device and drive mode selection method202010,538,858Method for manufacturing group 13 nitride crystal and group 13 nitride crystal202010,518,640Battery remaining capacity display device, battery system, and battery remaining capacity display method201910,501,051Control device, control method, program, and control system201910,298,880Communication management system, communication system, communication management method, and medium201910,100,426Method for producing gallium nitride crystal201810,082,125Control apparatus and ignition apparatus201810,012,203Ignition coil for internal combustion engine20189,905,462'Semiconductor device and method for manufacturing the same'20189,779,978'Method of manufacturing semiconductor device and semiconductor manufacturing apparatus'20179,780,111'Semiconductor device and method for manufacturing the same'20179,754,793'Method for manufacturing semiconductor device'20179,673,217'Semiconductor device and method for manufacturing same'20179,385,510'Spark plug for internal combustion engine and method of manufacturing spark plug'20169,368,719'Nonvolatile memory device'20169,362,487'Ferroelectric memory and manufacturing method of the same'20169,153,779'Resistance change memory element and resistance change memory'20159,006,697'Resistance change element and nonvolatile memory device'20158,941,088'Nonvolatile memory with resistance change layer'20158,922,018'Semiconductor device and semiconductor device manufacturing method'20148,569,728'Nonvolatile memory with variable resistance change layers'20138,537,594'Resistance change element and resistance change memory'20138,410,467'Nonvolatile memory device and method of manufacturing the same'20138,148,274'Semiconductor device having oxidized metal film and manufacture method of the same'20127,996,813'Method for generating pattern, method for manufacturing semiconductor device, semiconductor device, and computer program'20117,994,054'Semiconductor device having oxidized metal film and manufacture method of the same'20117,982,575'Insulating member'20117,923,839'Semiconductor device and method for fabricating semiconductor device'20117,907,040'Ignition coil and method for manufacturing the same'20117,791,202'Semiconductor device having oxidized metal film and manufacture method of the same'20107,667,332'Method for generating pattern, method for manufacturing semiconductor device, semiconductor device, and computer program product'20107,595,714'Ignition coil'20097,351,656'Semiconductor device having oxidized metal film and manufacture method of the same'20086,980,073'Ignition coil with optimized thermal stress relaxing member'20056,946,387'Semiconductor device and method for manufacturing the same'20056,809,621'Internal combustion engine ignition coil, and method of producing the same'20046,768,202'Semiconductor device and method of manufacturing the same'20046,720,253'Method of manufacturing semiconductor device having an aluminum wiring layer'20046,673,704'Semiconductor device and method of manufacturing the same'20046,662,794'Ignition coil for internal combustion engine'20036,518,177'Method of manufacturing a semiconductor device'20036,500,686'Hot plate and method of manufacturing semiconductor device'20026,440,843'Semiconductor device and method for manufacturing the same'20026,436,813'Semiconductor device and method of manufacturing the same'20026,423,192'Sputtering apparatus and film forming method'20026,306,756'Method for production of semiconductor device'20016,307,267'Semiconductor device and manufacturing method thereof'20016,229,211'Semiconductor device and method of manufacturing the same'20016,090,701'Method for production of semiconductor device'20006,071,810'Method of filling contact holes and wiring grooves of a semiconductor device'20005,981,150'Method for forming a resist pattern'19995,775,980'Polishing method and polishing apparatus'19985,723,367'Wiring forming method'19985,692,483'Ignition coil used for an internal combustion engine'19975,661,345'Semiconductor device having a single-crystal metal wiring'19975,607,718'Polishing method and polishing apparatus'19975,409,862'Method for making aluminum single crystal interconnections on insulators'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2017Patents assigned to TOSHIBA KK (38)· patent assignee history
1995–2019Based in Kanagawa, JP· patent location history
1997–2014Based in Yokohama, JP· patent location history
2003–2018Patents assigned to DENSO CORP (9)· patent assignee history
2003–2011Based in Chita-gun, JP· patent location history
2012–2019Patents assigned to WADA JUNICHI (7)· patent assignee history
2015–2018Based in Mie, JP· patent location history
2017–2020Patents assigned to TOSHIBA MEMORY CORP (4)· patent assignee history
2019–2021Patents assigned to OMRON TATEISI ELECTRONICS CO (14)· patent assignee history
2019–2021Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK381995–2017
OMRON TATEISI ELECTRONICS CO142019–2021
DENSO CORP92003–2018
WADA JUNICHIself72012–2019
TOSHIBA MEMORY CORP42017–2020
Locations
LocationPatentsSpan
Yokohama, JP211997–2014
Tokyo, JP142019–2021
Kanagawa, JP131995–2019
Mie, JP62015–2018
Chita-gun, JP42003–2011