Inventor
Kazumi Sugai
Inventor
Tokyo, JP
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1031%
C23CCoating metallic material8%
B05CApparatus for applying fluent materials to surfaces, in general5%
B05DProcesses for applying fluent materials to surfaces, in general5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B24BMachines, devices, or processes for grinding or polishing3%
B41JTypewriters3%
G01BMeasuring length, thickness or similar linear dimensions3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
PatentTitleYear
11,072,168Droplet discharge head20216,569,756'Method for manufacturing a semiconductor device'20036,509,649'Semiconductor device and fabricating method thereof'20036,496,255'Measurement of crystal face orientation'20026,465,354'Method of improving the planarization of wiring by CMP'20026,403,468'Method for forming embedded metal wiring'20026,368,981'Method of manufacturing semiconductor device and chemical mechanical polishing apparatus'20026,268,090'Process for manufacturing semiconductor device and exposure mask'20016,184,131'Process of forming solid thin film from layer of liquid material without void and film forming apparatus used therein'20016,174,563'Method for forming thin metal films'20016,143,671'Semiconductor device manufacturing method'20006,123,992'Method of forming aluminum interconnection layer'20006,114,236'Process for production of semiconductor device having an insulating film of low dielectric constant'20006,083,832'Method of manufacturing semiconductor device'20005,993,546'Apparatus for forming a solid thin film from a layer of liquid material without void'19995,793,479'Thin-film formation device and method'19985,545,591'Method for forming an aluminum film used as an interconnect in a semiconductor device'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2003Patents assigned to NEC CORP (15)· patent assignee history
1996–2003Based in Tokyo, JP· patent location history
1998Patents assigned to ANELVA CORP (1)· patent assignee history
2003Patents assigned to NEC ELECTRONICS CORP (1)· patent assignee history
2021Patents assigned to SEIKO EPSON CORP (1)· patent assignee history
2021Based in Chino, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 15 | 1996–2003 |
| ANELVA CORP | 1 | 1998 |
| NEC ELECTRONICS CORP | 1 | 2003 |
| SEIKO EPSON CORP | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 16 | 1996–2003 |
| Chino, JP | 1 | 2021 |