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Inventor

Chao-Chen Cheng

Inventor
Hsinchu, TW

Overview

31→
Patents
1998–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 31 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers41%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
LOC1313%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light11%
H01LSemiconductor devices9%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
B23KSoldering or unsoldering2%
PatentTitleYear
9,343,620'Method for fabricating a light emitting diode (LED) die having protective substrate'20169,231,152'Light emitting diode'20169,190,589'Light emitting diode'20159,130,114'Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication'20158,871,547'Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate'20148,703,515'Method for guiding current in a light emitting diode (LED) device'20148,685,764'Method to make low resistance contact'20148,686,461'Light emitting diode (LED) die having stepped substrates and method of fabrication'20148,614,449'Protection for the epitaxial structure of metal devices'2013D0693779'LED chip'20138,546,818'Vertical LED with current-guiding structure'2013D0690670'LED chip'2013D0689834'LED chip'2013D0685334'LED chip'2013D0684940'LED chip'20138,466,479'Light emitting diodes (LEDs) with improved light extraction by roughening'2013D0684549'LED chip'20138,148,733'Vertical LED with current guiding structure'20128,143,112'Method for removing semiconductor street material'20128,124,454'Die separation'20128,003,994'Vertical LED with current guiding structure'20117,897,420'Light emitting diodes (LEDs) with improved light extraction by roughening'20117,892,891'Die separation'2011D0627747'Light emitting diode device'20107,829,440'Method of separating semiconductor dies'20107,759,670'Vertical LED with current guiding structure'20107,723,718'Epitaxial structure for metal devices'20107,687,322'Method for removing semiconductor street material'20107,524,686'Method of making light emitting diodes (LEDs) with improved light extraction by roughening'20095,981,109'Using (LaNiO.sub.3) .sub.X (TiO.sup.2) .sub.1-X and (LaNiO.sub.3) .sub.X (Ta.sub.2 O.sub.5) .sub.1-X oxide absorption composites for attenuating phase shifting blanks and masks'19995,714,285'Using (LaNiO.sub.3).sub.X (TiO.sub.2).sub.1-x oxide absorption composite for attenuating phase shifting blanks and masks'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–1999Based in Taipei, TW· patent location history
2009–2016Based in Hsinchu, TW· patent location history
2010–2016Based in Miao-Li County, TW· patent location history
2011–2016Patents assigned to SEMILEDS OPTOELECTRONICS CO (22)· patent assignee history
2012–2014Patents assigned to CHENG CHAO-CHEN (14)· patent assignee history
2012–2014Patents assigned to CHU CHEN-FU (14)· patent assignee history
2012–2014Patents assigned to CHENG HAO-CHUN (8)· patent assignee history
2012–2014Patents assigned to CHU JIUNN-YI (7)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMILEDS OPTOELECTRONICS CO222011–2016
CHENG CHAO-CHENself142012–2014
CHU CHEN-FU142012–2014
CHENG HAO-CHUN82012–2014
CHU JIUNN-YI72012–2014
Locations
LocationPatentsSpan
Hsinchu, TW202009–2016
Miao-Li County, TW92010–2016
Taipei, TW21998–1999