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Inventor

James N. Highfill

Inventor
St. Louis, MO, US

Overview

2→
Patents
2015–2017
Patent span
Performing operations
Primary field (CPC B)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B28Dprimary
B28DWorking stone or stone-like materials25%
C30BSingle-crystal growth25%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation25%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution25%
PatentTitleYear
9,682,495'Method and apparatus for processing sapphire'20179,051,659'Silicon single crystal doped with gallium, indium, or aluminum'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015Patents assigned to DELK II FRANK S (1)· patent assignee history
2015Patents assigned to DELUCA JOHN P (1)· patent assignee history
2015Patents assigned to GTAT IP HOLDING (1)· patent assignee history
2015Patents assigned to HIGHFILL JAMES N (1)· patent assignee history
2015Based in St. Paul, MO, US· patent location history
2017Patents assigned to GTAT CORP (1)· patent assignee history
2017Based in St. Louis, MO, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
DELK II FRANK S12015
DELUCA JOHN P12015
GTAT CORP12017
GTAT IP HOLDING12015
HIGHFILL JAMES Nself12015
Locations
LocationPatentsSpan
St. Louis, MO, US12017
St. Paul, MO, US12015