Inventor
Chih-Chao Chou
Inventor
TW
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H01LSemiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
B82YSpecific uses or applications of nanostructures17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
G01RMeasuring electric variables1%
PatentTitleYear
12,439,638FET with wrap-around silicide and fabrication methods thereof202512,402,405Integration of multiple fin stuctures on a single substrate202512,368,078Dual-side power rail design and method of making same202512,317,542Semiconductor device with backside self-aligned power rail and methods of forming the same202512,237,233Backside power rail for physical failure analysis (PFA)202512,198,986Dual channel gate all around transistor device and fabrication methods thereof202512,183,678Backside power rail structure and methods of forming same202412,057,385Integrated circuits with backside power rails202411,996,483FET with wrap-around silicide and fabrication methods thereof202411,973,079Integration of multiple fin structures on a single substrate202411,916,125Semiconductor device with backside self-aligned power rail and methods of forming the same202411,855,178Semiconductor devices having air-gap202311,842,965Backside power rail structure and methods of forming same202311,776,854Semiconductor structure with hybrid nanostructures202311,742,280Integrated circuits with backside power rails202311,721,594Dual channel gate all around transistor device and fabrication methods thereof202311,695,076FET with wrap-around silicide and fabrication methods thereof202311,563,104Semiconductor devices having air-gap spacers202311,532,521Dual channel gate all around transistor device and fabrication methods thereof202211,444,170Semiconductor device with backside self-aligned power rail and methods of forming the same202211,387,181Integrated circuits with backside power rails202211,348,836Semiconductor structure with nanostructure and method for manufacturing the same202211,342,325Integration of multiple fin structures on a single substrate202211,264,327Backside power rail structure and methods of forming same202211,251,090Dual channel gate all around transistor device and fabrication methods thereof202211,158,727Structure and method for gate-all-around device with extended channel2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (26)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 26 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 26 | 2021–2025 |