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Inventor

Satoshi Obara

Inventor
Funabashi, JP

Overview

2→
Patents
2011–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth20%
H01LSemiconductor devices20%
H04LTransmission of digital information, e.g. telegraphic communication20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
Y10TTechnical subjects covered by former us classification20%
PatentTitleYear
8,986,448'Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method'20157,979,693'Relay apparatus for encrypting and relaying a frame'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011Patents assigned to FUJITSU LTD (1)· patent assignee history
2011Based in Kawasaki, JP· patent location history
2015Patents assigned to AIR WATER INC (1)· patent assignee history
2015Patents assigned to ASAMURA HIDETOSHI (1)· patent assignee history
2015Patents assigned to KAWAMURA KEISUKE (1)· patent assignee history
2015Patents assigned to OBARA SATOSHI (1)· patent assignee history
2015Based in Funabashi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
AIR WATER INC12015
ASAMURA HIDETOSHI12015
FUJITSU LTD12011
KAWAMURA KEISUKE12015
OBARA SATOSHIself12015
Locations
LocationPatentsSpan
Funabashi, JP12015
Kawasaki, JP12011