Inventor
Runling Li
Inventor
Shanghai, CN
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices27%
H10DInorganic electric semiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
B23KSoldering or unsoldering9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
PatentTitleYear
10,868,144Methods and systems for reducing dislocation defects in high concentration epitaxy processes202010,332,979Methods and systems for reducing dislocation defects in high concentration epitaxy processes20199,171,731'Method of forming the gate with the LELE double pattern'20157,838,411'Fluxless reflow process for bump formation'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010Patents assigned to SEMICONDUCTOR MFG INT SHANGHAI (1)· patent assignee history
2010–2020Based in Shanghai, CN· patent location history
2015–2020Patents assigned to SHANGHAI HUALI MICROELECT CORP (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHANGHAI HUALI MICROELECT CORP | 3 | 2015–2020 |
| SEMICONDUCTOR MFG INT SHANGHAI | 1 | 2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Shanghai, CN | 4 | 2010–2020 |