Inventor
Ming-Jer Kao
Inventor
Hsinchu, TW
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores23%
B82YSpecific uses or applications of nanostructures14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
H10KOrganic electric solid-state devices11%
H01LSemiconductor devices8%
H10DInorganic electric semiconductor devices5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
PatentTitleYear
11,011,568Semiconductor structure, back-side illuminated image sensor and method for manufacturing the same202111,011,567Structure and method for 3D image sensor202110,916,502Semiconductor device and manufacturing method thereof202110,910,420Semiconductor switching device separate by device isolation202110,541,233Display device20207,800,937'Method for switching magnetic moment in magnetoresistive random access memory with low current'20107,577,017'High-bandwidth magnetoresistive random access memory devices and methods of operation thereof'20097,577,019'Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device'20097,539,049'Magnetic random access memory and operation method'20097,535,081'Metal nanoline process and applications on growth of aligned nanostructure thereof'20097,515,458'Structure and access method for magnetic memory cell and circuit of magnetic memory'20097,515,462'Writing method for magnetic memory cell and magnetic memory array structure'20097,463,510'High-bandwidth magnetoresistive random access memory devices'20087,420,837'Method for switching magnetic moment in magnetoresistive random access memory with low current'20087,359,237'High write selectivity and low power magnetic random access memory and method for fabricating the same'20087,226,531'Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubes'20077,208,808'Magnetic random access memory with lower switching field'20077,182,914'Structure and manufacturing process of a nano device transistor for a biosensor'20077,023,726'Hybrid magnetoresistive random access memory (MRAM) architecture'20067,001,805'Method for fabricating n-type carbon nanotube device'20066,962,839'Apparatus and manufacturing process of carbon nanotube gate field effect transistor'20056,862,228'High reliable reference current generator for MRAM'20056,852,582'Carbon nanotube gate field effect transistor'20056,821,911'Manufacturing method of carbon nanotube transistors'20046,791,887'High reliable reference current generator for MRAM'20046,757,189'Magnetic random access memory with memory cells of different resistances connected in series and parallel'20046,723,624'Method for fabricating n-type carbon nanotube device'20046,642,595'Magnetic random access memory with low writing current'20036,562,706'Structure and manufacturing method of SiC dual metal trench Schottky diode'20035,981,999'Power trench DMOS with large active cell density'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2020Patents assigned to IND TECH RES INST (26)· patent assignee history
1999–2010Based in Hsinchu, TW· patent location history
2003–2009Based in Tainan, TW· patent location history
2005Based in Tianan, TW· patent location history
2009–2020Based in Hsinchu County, TW· patent location history
2020Patents assigned to MACROBLOCK INC (1)· patent assignee history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2021Based in Chiayi, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IND TECH RES INST | 26 | 1999–2020 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 4 | 2021 |
| MACROBLOCK INC | 1 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 12 | 1999–2010 |
| Tainan, TW | 9 | 2003–2009 |
| Chiayi, TW | 4 | 2021 |
| Hsinchu County, TW | 4 | 2009–2020 |
| Tianan, TW | 1 | 2005 |