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Inventor

Toshiro Futatsugi

Inventor
Kawasaki, JP

Overview

16→
Patents
1988–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 16 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices36%
B82YSpecific uses or applications of nanostructures14%
G11CStatic stores8%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H01LSemiconductor devices6%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
PatentTitleYear
10,593,724Method of manufacturing a semiconductor device202010,191,006Humidity sensor201910,043,848Semiconductor device and a method of manufacturing a semiconductor device20188,013,379'Semiconductor variable capacitor and method of manufacturing the same'20117,468,297'Method of manufacturing semiconductor device'20086,774,430'Non-volatile semiconductor memory device having gate insulating film with thick end sections'20046,480,420'Semiconductor memory device having source areas of memory cells supplied with a common voltage'20026,294,794'Non-linear optical device using quantum dots'20016,195,292'Semiconductor memory with floating gate type FET'20015,889,288'Semiconductor quantum dot device'19995,031,005'Semiconductor device'19914,907,196'Semiconductor memory device using resonant-tunneling transistor'19904,889,831'Method of forming a high temperature stable ohmic contact to a III-V substrate'19894,868,612'Semiconductor device utilizing multiquantum wells'19894,791,471'Semiconductor integrated circuit device'19884,777,517'Compound semiconductor integrated circuit device'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2008Patents assigned to FUJITSU LTD (12)· patent assignee history
1988Based in Atsugi, JP· patent location history
1989–1991Based in Isehara, JP· patent location history
1999–2011Based in Kawasaki, JP· patent location history
2008Based in Hino, JP· patent location history
2011Patents assigned to FUJITSU SEMICONDUCTOR LTD (1)· patent assignee history
2018–2020Patents assigned to SII SEMICONDUCTOR CORP (3)· patent assignee history
2018–2020Based in Chiba, JP· patent location history
2019–2020Patents assigned to ABLIC INC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUJITSU LTD121988–2008
SII SEMICONDUCTOR CORP32018–2020
ABLIC INC22019–2020
FUJITSU SEMICONDUCTOR LTD12011
Locations
LocationPatentsSpan
Kawasaki, JP61999–2011
Isehara, JP41989–1991
Chiba, JP32018–2020
Atsugi, JP21988
Hino, JP12008