Inventor
TAI-YEN PENG
Inventor
TW
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for24%
H10BElectronic memory devices23%
H01LSemiconductor devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
G11CStatic stores10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10DInorganic electric semiconductor devices4%
B82YSpecific uses or applications of nanostructures3%
H01FMagnets3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
12,317,751Integrated circuit202512,274,181Magnetic tunnel junction device and method202512,268,097Top-interconnection metal lines for a memory array device and methods for forming the same202512,219,879Gradient protection layer in MTJ manufacturing202512,219,880Integrated circuit device202512,178,051Magnetic random access memory and manufacturing method thereof202412,127,489Integrated circuit structure202412,069,958Semiconductor device202412,002,711Patterning methods for semiconductor devices and structures resulting therefrom202411,985,906Low-resistance contact to top electrodes for memory cells and methods for forming the same202411,980,040Semiconductor device with magnetic tunnel junctions202411,968,908Magnetic tunnel junction device202411,944,017Semiconductor structure and manufacturing method of the same202411,856,865Gradient protection layer in MTJ manufacturing202311,856,869Semiconductor device and manufacturing method thereof202311,805,658Magnetic random access memory and manufacturing method thereof202311,800,812Integrated circuit202311,723,284Top-interconnection metal lines for a memory array device and methods for forming the same202311,683,991Semiconductor structure and manufacturing method of the same202311,683,988Semiconductor device202311,665,977Magnetic tunnel junction device and method202311,665,971Metal etching stop layer in magnetic tunnel junction memory cells202311,588,107Integrated circuit structure202311,417,832Semiconductor device and manufacturing method thereof202211,411,176Gradient protection layer in MTJ manufacturing202211,387,406Magnetic of forming magnetic tunnel junction device using protective mask202211,348,829Patterning methods for semiconductor devices and structures resulting therefrom202211,271,150Integrated circuit202211,217,476Method of forming an interconnect structure of a semiconductor device202211,189,658Magnetic random access memory and manufacturing method thereof202111,183,392Method for manufacturing semiconductor devices and structures thereof2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (31)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 31 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 31 | 2021–2025 |