Inventor

Hyuk-soon Choi

Inventor
Hwaseong-si, KR

Overview

46→
Patents
2008–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
H04NPictorial communication, e.g. television4%
B82YSpecific uses or applications of nanostructures3%
Y10TTechnical subjects covered by former us classification3%
G02BOptical elements, systems or apparatus2%
G11CStatic stores2%
H10BElectronic memory devices2%
PatentTitleYear
10,700,115Image sensors202010,672,817Image sensors with light channeling reflective layers therein202010,211,245Image sensor including a pixel having photoelectric conversion elements and image processing device having the image sensor201910,199,421Image sensors201910,157,948Image sensors with light channeling reflective layers therein201810,002,893Image sensor including hybrid pixel structure20189,966,407Unit pixels, image sensors including the same, and image processing systems including the same20189,911,777'Image sensors using different photoconversion region isolation structures for different types of pixel regions'20189,859,410'High electron mobility transistors and methods of fabricating the same'20189,818,781'Image pixel including a plurality of trenches, image sensor including the same, and image processing system including the same'20179,782,166'Suturing bead, suturing needle, side suction cap and endoscopic organ suturing implement using same'20179,711,553'Image sensor including a pixel having photoelectric conversion elements and image processing device having the image sensor'20179,660,048'High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same'20179,608,100'High electron mobility transistor and method of manufacturing the same'20179,450,071'Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices'20169,443,968'High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same'20169,299,800'Methods of manufacturing high electron mobility transistors'20169,252,255'High electron mobility transistor and method of manufacturing the same'20169,245,947'High electron mobility transistors and methods of manufacturing the same'20169,245,738'High electron mobility transistor and method of manufacturing the same'20169,231,093'High electron mobility transistor and method of manufacturing the same'20169,123,740'High electron mobility transistors and methods of manufacturing the same'20159,117,890'High-electron mobility transistor and method of manufacturing the same'20159,048,210'Transistors and methods of manufacturing the same'20158,921,890'Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor device'20148,907,377'High electron mobility transistor and method of manufacturing the same'20148,878,246'High electron mobility transistors and methods of fabricating the same'20148,835,985'Power electronic device and method of manufacturing the same'20148,816,396'E-mode high electron mobility transistor and method of manufacturing the same'20148,803,565'Driving circuits, power devices and electronic devices including the same'20148,796,737'High electron mobility transistors and methods of manufacturing the same'20148,790,998'Method of forming core-shell type structure and method of manufacturing transistor using the same'20148,569,769'E-mode high electron mobility transistors and methods of manufacturing the same'20138,513,705'Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the same'20138,508,194'Semiconductor device'20138,480,959'Chemical sensor using thin-film sensing member'20138,294,134'Phase change memory devices having a current increase unit'20128,269,021'Aromatic imide-based dispersant for carbon nanotubes and carbon nanotube composition comprising the same'20128,263,449'Method of manufacturing high electron mobility transistor'20128,097,304'Method of forming nano-particle array by convective assembly, and convective assembly apparatus for the same'20128,058,701'Antifuse structures, antifuse array structures, methods of manufacturing the same'20117,955,562'Chemical sensor using thin-film sensing member'20117,910,913'Phase change memory devices'20117,754,881'Aromatic imide-based dispersant for carbon nanotubes and carbon nanotube composition comprising the same'20107,580,190'Micro lens array and method of manufacturing the same'20097,456,310'Dispersant for dispersing carbon nanotubes and carbon nanotube composition comprising the same'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (45)· patent assignee history
2008–2012Based in Gyeonggi-do, KR· patent location history
2009–2014Based in Seongnam-si, KR· patent location history
2011–2017Patents assigned to CHOI HYUK-SOON (21)· patent assignee history
2012–2017Patents assigned to HONG KI-HA (17)· patent assignee history
2012–2017Patents assigned to SHIN JAI-KWANG (17)· patent assignee history
2012–2017Patents assigned to KIM JONG-SEOB (16)· patent assignee history
2012–2020Based in Hwaseong-si, KR· patent location history
2017Based in Seoul, KR· patent location history
2018Based in Suwon-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD452008–2020
CHOI HYUK-SOONself212011–2017
HONG KI-HA172012–2017
SHIN JAI-KWANG172012–2017
KIM JONG-SEOB162012–2017
Locations
LocationPatentsSpan
Hwaseong-si, KR332012–2020
Seongnam-si, KR92009–2014
Gyeonggi-do, KR22008–2012
Suwon-si, KR12018
Seoul, KR12017