Inventor
Bin-Siang Tsai
Inventor
Changhua County, TW
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H10DInorganic electric semiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10BElectronic memory devices5%
B82YSpecific uses or applications of nanostructures4%
G11CStatic stores4%
H10NElectric solid-state devices not otherwise provided for4%
H10KOrganic electric solid-state devices3%
H01FMagnets1%
PatentTitleYear
11,121,312Semiconductor device and method for fabricating the same202111,114,331Method for fabricating shallow trench isolation202111,114,612Magnetoresistive random access memory and method for fabricating the same202111,101,324Memory cell and forming method thereof202111,094,900Semiconductor device and method for fabricating the same202111,049,765Semiconductor device202111,043,596Semiconductor device and fabrication method thereof202111,037,833Fabrication method of semiconductor device with spacer trimming process202110,847,465Semiconductor device and method to fabricate the semiconductor device202010,692,758Semiconductor device and method to fabricate the semiconductor device202010,679,893Interconnection structure and method of forming the same202010,665,546Semiconductor device and method to fabricate the semiconductor device202010,504,594Non-volatile memory and forming method thereof201910,186,453Semiconductor structure and process thereof201910,008,409Method for fabricating a semiconductor device20189,966,425Method for fabricating a MIM capacitor20189,917,007'Method of forming opening pattern'20189,812,352'Semiconductor device and method for fabricating the same'20179,653,549'Semiconductor device formed with nanowire'20179,633,955'Semiconductor integrated circuit structure including dielectric having negative thermal expansion'20179,543,195'Semiconductor process'20179,530,696'Method of fabricating semiconductor device'20169,379,182'Method for forming nanowire and semiconductor device formed with the nanowire'20168,431,473'Method for fabricating semiconductor device'20137,781,830'Recessed channel transistor and method for preparing the same'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2021Based in Changhua County, TW· patent location history
2013–2021Patents assigned to UNITED MICROELECTRONICS CORP (24)· patent assignee history
2013Patents assigned to CHEN PO-CHUN (1)· patent assignee history
2013Patents assigned to HU SHU-HUI (1)· patent assignee history
2013Patents assigned to HUNG YA-JYUAN (1)· patent assignee history
2013Patents assigned to LIN CHIN-FU (1)· patent assignee history
2016Based in Erlin Township, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 24 | 2013–2021 |
| CHEN PO-CHUN | 1 | 2013 |
| HU SHU-HUI | 1 | 2013 |
| HUNG YA-JYUAN | 1 | 2013 |
| LIN CHIN-FU | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Changhua County, TW | 24 | 2010–2021 |
| Erlin Township, TW | 1 | 2016 |