Inventor

Takashi Ando

Inventor

Tuckahoe, NY, US

Overview

42→

Patents

1978–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 42 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices26%

H10DInorganic electric semiconductor devices13%

H10NElectric solid-state devices not otherwise provided for13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%

H10BElectronic memory devices10%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

G11CStatic stores5%

B82YSpecific uses or applications of nanostructures2%

Y10TTechnical subjects covered by former us classification2%

B22FWorking metallic powder1%

PatentTitleYear

11,011,704Forming RRAM cell structure with filament confinement2021 11,004,511Memory device having separate programming and resistance readout control2021 10,991,881Method for controlling the forming voltage in resistive random access memory devices2021 10,991,763Vertical array of resistive switching devices having restricted filament regions and tunable top electrode volume2021 10,985,069Gate stack optimization for wide and narrow nanosheet transistor devices2021 10,978,551Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor2021 10,971,593Oxygen reservoir for low threshold voltage P-type MOSFET2021 10,971,407Method of forming a complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate2021 10,971,549Semiconductor memory device having a vertical active region2021 10,964,603Hybrid gate stack integration for stacked vertical transport field-effect transistors2021 10,957,937Three-terminal copper-driven neuromorphic device2021 10,957,742Resistive random-access memory array with reduced switching resistance variability2021 10,950,662Resistive memory device with meshed electrodes2021 10,950,787Method having resistive memory crossbar array employing selective barrier layer growth2021 10,943,787Confined work function material for gate-all around transistor devices2021 10,943,924Semiconductor-on-insulator finFET devices with high thermal conductivity dielectrics2021 10,943,903Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy2021 10,937,883Vertical transport FETs having a gradient threshold voltage2021 10,930,762Multiple work function nanosheet field effect transistor using sacrificial silicon germanium growth2021 10,923,403Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation2021 10,915,811Intercalation cells for multi-task learning2021 10,916,432Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device2021 10,916,699Resistive memory crossbar array employing selective barrier layer growth2021 10,916,659Asymmetric threshold voltage FinFET device by partial channel doping variation2021 10,907,702Transmission device2021 10,903,424Resistive RAM cell structure for gradual set programming2021 10,903,425Oxygen vacancy and filament-loss protection for resistive switching devices2021 10,903,421Controlling filament formation and location in a resistive random-access memory device2021 10,896,965Formation of wrap-around-contact to reduce contact resistivity2021 10,896,962Asymmetric threshold voltages in semiconductor devices2021 10,892,408Multivalent oxide cap for analog switching resistive memory2021 10,885,979Paired intercalation cells for drift migration2021 10,886,362Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement2021 10,886,369Formation of self-limited inner spacer for gate-all-around nanosheet FET2021 10,886,467CBRAM by subtractive etching of metals2021 10,886,376Formation of wrap-around-contact to reduce contact resistivity2021 10,886,334Vertical array of resistive switching devices having a tunable oxygen vacancy concentration2021 9,078,294'Nanoheater elements, systems and methods of use thereof'2015 6,936,118'Process of forming a composite coating on a substrate'2005 5,225,004'Bulk rapidly solifidied magnetic materials'1993 4,991,501'Dampening water feed roller for planographic printing press'1991 4,082,718'Tap hole mix'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1978–1991Patents assigned to NIPPON STEEL CORP (2)· patent assignee history

1991Patents assigned to AKYAMA INSATSUKI SEIZO KK (1)· patent assignee history

1993Based in Watertown, MA, US· patent location history

2005–2015Based in Belmont, MA, US· patent location history

2015Patents assigned to ANDO TEIICHI (1)· patent assignee history

2021Patents assigned to IBM (35)· patent assignee history

2021Patents assigned to AISIN AW CO (1)· patent assignee history

2021Based in Tuckahoe, NY, US· patent location history

2021Based in Eastchester, NY, US· patent location history

2021Based in Okazaki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	35	2021
NIPPON STEEL CORP	2	1978–1991
AISIN AW CO	1	2021
AKYAMA INSATSUKI SEIZO KK	1	1991
ANDO TEIICHIself	1	2015

Locations

Location	Patents	Span
Tuckahoe, New York, US	31	2021
Eastchester, New York, US	5	2021
Belmont, Massachusetts, US	2	2005–2015
Okazaki, JP	1	2021
Watertown, Massachusetts, US	1	1993