Inventor
PAUL MA
Inventor
US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H01LSemiconductor devices12%
H01JElectric discharge tubes or discharge lamps6%
H10DInorganic electric semiconductor devices4%
B08BCleaning in general2%
B65DContainers for storage or transport of articles or materials, e.g. bags, barrels, bottles, boxes, cans, cartons, crates, drums, jars, tanks, hoppers, forwarding containers2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
12,595,557Method of forming structure including a doped adhesion film2026D1113114Shoe sole202612,472,539Methods and apparatus for cleaning a vessel202512,473,641Apparatus for providing a gas mixture to a reaction chamber and method of using same2025D1099184Weighted lift pin202512,351,903Method and system for depositing molybdenum layers202512,241,158Method for forming structures including transition metal layers202512,237,171Method of forming vanadium nitride layer and structure including the vanadium nitride layer202512,006,572Reactor system including a gas distribution assembly for use with activated species and method of using same202411,901,175Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer202411,885,013Method of forming vanadium nitride layer and structure including the vanadium nitride layer202411,791,153Deposition of hafnium oxide within a high aspect ratio hole202311,674,220Method for depositing molybdenum layers using an underlayer202311,421,318Methods and apparatus for high reflectivity aluminum layers202211,424,119Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to ASM IP HOLDING BV (12)· patent assignee history
2022Patents assigned to APPLIED MATERIALS INC (1)· patent assignee history
2022–2026Based in US· patent location history
2026Patents assigned to ASM IP HOLDING B V (1)· patent assignee history
2026Patents assigned to ON CLOUDS GMBH (1)· patent assignee history
2026Based in CH· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ASM IP HOLDING BV | 12 | 2022–2025 |
| APPLIED MATERIALS INC | 1 | 2022 |
| ASM IP HOLDING B V | 1 | 2026 |
| ON CLOUDS GMBH | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 14 | 2022–2026 |
| CH | 1 | 2026 |