Inventor
Stephan Voss
Inventor
Munich, DE
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
H01LSemiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
A61BDiagnosis4%
C23CCoating metallic material3%
H01JElectric discharge tubes or discharge lamps3%
H03KPulse technique3%
C30BSingle-crystal growth1%
H01FMagnets1%
PatentTitleYear
11,081,544Method of manufacturing a semiconductor device comprising first and second field stop zone portions202110,622,138Cooling ducts for transformers' winding202010,342,416Medical probe with multi-fiber lumen201910,340,264Semiconductor device comprising a clamping structure201910,249,746Bipolar transistor with superjunction structure201910,177,230Semiconductor device including at least one type of deep-level dopant201910,153,339Semiconductor device and method for forming a semiconductor device201810,143,450System with photonic biopsy device for obtaining pathological information201810,038,052Semiconductor device with channelstopper and method for producing the same20189,985,017Semiconductor device comprising a clamping structure20189,979,187Power device with overvoltage arrester20189,917,181'Bipolar transistor with superjunction structure'20189,899,377'Insulated gate semiconductor device with soft switching behavior'20189,865,717'Semiconductor device'20189,854,961'Photonic needle with optimal bevel angle'20189,859,272'Semiconductor device with a reduced band gap zone'20189,825,023'Insulated gate bipolar transistor comprising negative temperature coefficient thermistor'20179,809,877'Ion implantation apparatus with ion beam directing unit'20179,754,787'Method for treating a semiconductor wafer'20179,704,712'Method of making a semiconductor device formed by thermal annealing'20179,548,370'Transistor device with integrated gate-resistor'20179,508,812'Semiconductor device'20169,390,883'Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing'20169,224,806'Edge termination structure with trench isolation regions'20159,111,989'Insulated gate bipolar transistor including emitter short regions'20159,082,741'Semiconductor device including first and second semiconductor materials'20159,041,120'Power MOS transistor with integrated gate-resistor'20158,866,255'Semiconductor device with staggered oxide-filled trenches at edge region'20148,343,862'Semiconductor device with a field stop zone and process of producing the same'20137,989,888'Semiconductor device with a field stop zone and process of producing the same'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2015Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (4)· patent assignee history
2011–2021Based in Munich, DE· patent location history
2013–2015Patents assigned to SCHULZE HANS-JOACHIM (3)· patent assignee history
2015–2021Patents assigned to INFINEON TECHNOLOGIES AG (16)· patent assignee history
2016–2019Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (6)· patent assignee history
2018–2019Patents assigned to KONINKLIJKE PHILIPS NV (3)· patent assignee history
2018–2019Based in Schwerin, DE· patent location history
2020Based in Neunkirchen am Brand, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 16 | 2015–2021 |
| INFINEON TECHNOLOGIES AUSTRIA AG | 6 | 2016–2019 |
| INFINEON TECHNOLOGIES AUSTRIA | 4 | 2011–2015 |
| KONINKLIJKE PHILIPS NV | 3 | 2018–2019 |
| SCHULZE HANS-JOACHIM | 3 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Munich, DE | 26 | 2011–2021 |
| Schwerin, DE | 3 | 2018–2019 |
| Neunkirchen am Brand, DE | 1 | 2020 |