Inventor
SANH D. TANG
Inventor
US
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices27%
H01LSemiconductor devices21%
H10DInorganic electric semiconductor devices21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
G11CStatic stores10%
H10NElectric solid-state devices not otherwise provided for4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
G06FElectric digital data processing1%
PatentTitleYear
12,426,262Charge storage apparatus and methods202512,406,919Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells202512,324,143Methods of utilizing etch-stop material during fabrication of capacitors, integrated assemblies comprising capacitors202512,284,805String driver assemblies including two-dimensional materials, and related memory devices202512,219,765Three dimensional memory and methods of forming the same202512,219,758Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies202512,200,938Driver placement in memories having stacked memory arrays202512,150,292Integrated assemblies having voids along regions of gates, and methods of forming conductive structures202412,142,680Transistor structures having conductive structures along pillars of semiconductor material202412,069,852Methods of forming integrated assemblies having conductive material along sidewall surfaces of semiconductor pillars202412,029,039Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material202411,943,919Microelectronic devices including two-dimensional materials, and related memory devices and electronic systems202411,925,014Apparatuses including elongate pillars of access devices202411,923,289Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells202411,910,597Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies202411,864,386Memory arrays202411,805,653Driver placement in memories having stacked memory arrays2023RE049715Memory arrays202311,744,061Array of capacitors, an array of memory cells, a method of forming an array of capacitors, and a method of forming an array of memory cells202311,706,909Integrated assemblies comprising memory cells and shielding material between the memory cells202311,700,730Three dimensional memory and methods of forming the same202311,631,678Memory arrays comprising memory cells202311,600,535Integrated assemblies having conductive material along three of four sides around active regions, and methods of forming integrated assemblies202311,581,324Charge storage apparatus and methods202311,581,317Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies202311,569,266Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material202311,508,734Integrated assemblies, and methods of forming integrated assemblies202211,476,259Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systems202211,462,544Array of recessed access gate lines202211,456,299Integrated assemblies having voids along regions of gates, and methods of forming conductive structures202211,444,088Methods of forming integrated assemblies having conductive material along sidewall surfaces of semiconductor pillars202211,404,440Memory arrays202211,393,928Access devices formed with conductive contacts202211,393,748Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells202211,374,007Memory arrays202211,348,932Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies202211,201,154Methods of forming an apparatus including device structures including pillar structures, and related memory devices, and electronic systems202111,177,266Array of capacitors, an array of memory cells, a method of forming an array of capacitors, and a method of forming an array of memory cells2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to MICRON TECHNOLOGY INC (35)· patent assignee history
2021–2025Based in US· patent location history
2022Patents assigned to Gandhi Ramanathan (1)· patent assignee history
2022Patents assigned to KARDA KAMAL M (1)· patent assignee history
2022Patents assigned to LI HONG (1)· patent assignee history
2024–2025Patents assigned to LODESTAR LICENSING GROUP LLC (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 35 | 2021–2025 |
| LODESTAR LICENSING GROUP LLC | 3 | 2024–2025 |
| Gandhi Ramanathan | 1 | 2022 |
| KARDA KAMAL M | 1 | 2022 |
| LI HONG | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 38 | 2021–2025 |