Inventor
Tadashi Tomikawa
Inventor
Itami, JP
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%
H05KPrinted circuits8%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for4%
C23CCoating metallic material4%
H01JElectric discharge tubes or discharge lamps4%
H01RElectrically-conductive connections4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
8,356,762'Mounting structure of on-vehicle circuit unit and on-vehicle circuit unit'20137,877,868'Method of fabricating circuit configuration member'20117,632,110'Electric junction box'20097,233,495'Circuit configuration member and method of fabricating the same'20077,189,082'Electrical connection box'20077,108,519'Electrical connection box'20066,618,539'Heater module and optical waveguide module'20036,060,771'Connecting lead for semiconductor devices and method for fabricating the lead'20005,844,252'Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond'19985,668,382'Ohmic electrode and method for forming it'19975,600,156'Diamond semiconductor device with P-I-N type multilayer structure'19975,552,613'Electron device'19965,527,735'Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same'19965,476,812'Semiconductor heterojunction structure'19955,422,500'Ohmic contact electrodes for N-type semiconductor cubic boron nitride'19955,382,809'Semiconductor device including semiconductor diamond'19955,316,804'Process for the synthesis of hard boron nitride'19945,306,928'Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer'19945,298,461'Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride'19945,285,109'Ohmic contact electrodes for n-type semiconductor cubic boron nitride'19945,250,149'Method of growing thin film'19935,210,431'Ohmic connection electrodes for p-type semiconductor diamonds'19935,144,380'Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate'19925,117,267'Semiconductor heterojunction structure'19925,075,757'Ohmic contact electrodes for semiconductor diamonds'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2013Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (25)· patent assignee history
1991–2003Based in Itami, JP· patent location history
1992–1996Based in Hyogo, JP· patent location history
2006–2011Based in Mie, JP· patent location history
2009–2013Patents assigned to AUTONETWORKS TECHNOLOGIES LTD (3)· patent assignee history
2009–2013Patents assigned to SUMITOMO WIRING SYSTEMS (3)· patent assignee history
2009–2013Based in Yokkaichi, JP· patent location history
2013Patents assigned to HOSOKAWA TSUYOSHI (1)· patent assignee history
2013Patents assigned to KANO TOMOKI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SUMITOMO ELECTRIC INDUSTRIES | 25 | 1991–2013 |
| AUTONETWORKS TECHNOLOGIES LTD | 3 | 2009–2013 |
| SUMITOMO WIRING SYSTEMS | 3 | 2009–2013 |
| HOSOKAWA TSUYOSHI | 1 | 2013 |
| KANO TOMOKI | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Itami, JP | 11 | 1991–2003 |
| Hyogo, JP | 8 | 1992–1996 |
| Mie, JP | 4 | 2006–2011 |
| Yokkaichi, JP | 2 | 2009–2013 |