Inventor

Kevin Yang

Inventor
Santa Clara, CA, US

Overview

44→
Patents
1991–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices18%
G11CStatic stores11%
H05BElectric heating11%
H10BElectronic memory devices10%
F21VFunctional features or details of lighting devices or systems thereof8%
G02BOptical elements, systems or apparatus5%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted4%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications4%
H01FMagnets3%
H05KPrinted circuits3%
PatentTitleYear
9,761,921'Tunable bandpass filter'20179,392,682'LED lamp with tapered PCB'20169,200,785'LED light having edge mounted LED\'s'20159,041,317'Ballast lead wire configuration'20158,940,608'Methods for fabricating integrated circuits with drift regions and replacement gates'20158,659,228'LED ballast mount'20148,352,895'Model library implementation and methodology for worst case performance modeling for SRAM cells'20138,324,656'Reduction of electrostatic coupling for a thyristor-based memory cell'20128,115,128'Multifunction wall switch'20128,093,107'Thyristor semiconductor memory and method of manufacture'20128,025,419'Weather resistant road light'20117,903,430'Recessed light ballast mount'20117,894,256'Thyristor based memory cell'20117,894,255'Thyristor based memory cell'20117,893,456'Thyristor-based memory and its method of operation'20117,858,449'Thyristor device with carbon lifetime adjustment implant and its method of fabrication'20107,852,580'Actuation device having shape memory alloy component'20107,830,649'Ballast with multilead wires'20107,795,823'Actuation device having shape memory alloy component'20107,786,505'Reduction of charge leakage from a thyristor-based memory cell'20107,775,676'Weather resistant florescent fixture'20107,623,018'Slim filter inductor for electronic ballast'20097,564,335'Transformer hook mount'20097,554,130'Reducing effects of parasitic transistors in thyristor-based memory using an isolation or damage region'20097,498,917'Encapsulated transformer'20097,491,586'Semiconductor device with leakage implant and method of fabrication'20097,488,627'Thyristor-based memory and its method of operation'20097,488,626'Thyristor device with carbon lifetime adjustment implant and its method of fabrication'20097,466,016'Bent lead transistor'20087,381,999'Workfunction-adjusted thyristor-based memory device'20087,262,443'Silicide uniformity for lateral bipolar transistors'20077,195,959'Thyristor-based semiconductor device and method of fabrication'20077,078,739'Thyristor-based memory and its method of operation'20067,075,122'Thyristor device with carbon lifetime adjustment implant and its method of fabrication'20066,933,684'Electronic ballast using cut and save technology'20056,828,732'Fluorescent lamp end-of-life protection circuit'20046,204,602'Compact fluorescent lamp and ballast assembly with an air gap for thermal isolation'20015,923,126'Fluorescent lamp electronic ballast with rapid voltage turn-on after preheating'19995,793,482'Multiple optical lens system with auto-focus calibration'19985,712,720'Lens switching apparatus for dual-lens optical scanner'19985,552,939'Multi-lens changing mechanism for use in optical scanners'19965,107,184'Remote control of fluorescent lamp ballast using power flow interruption coding with means to maintain filament voltage substantially constant as the lamp voltage decreases'19925,068,576'Remote control of fluorescent lamp ballast using power flow interruption coding with means to maintain filament voltage substantially constant as the lamp voltage decreases'19915,055,746'Remote control of fluorescent lamp ballast using power flow interruption coding with means to maintain filament voltage substantially constant as the lamp voltage decreases'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–1992Patents assigned to ELECTRONIC BALLAST TECH (3)· patent assignee history
1996–1998Patents assigned to UMAX DATA SYSTEMS INC (3)· patent assignee history
1996–1998Based in Hsinchu, TW· patent location history
2006–2012Patents assigned to T RAM SEMICONDUCTOR INC (16)· patent assignee history
2006–2015Based in Santa Clara, CA, US· patent location history
2008–2016Patents assigned to YANG KEVIN (12)· patent assignee history
2008–2010Based in Rancho Palos Verdes, CA, US· patent location history
2009–2015Patents assigned to YANG KEVIN J (5)· patent assignee history
2009–2011Based in Palos Verdes Estates, CA, US· patent location history
2012–2016Based in Lomita, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
T RAM SEMICONDUCTOR INC162006–2012
YANG KEVINself122008–2016
YANG KEVIN Jself52009–2015
ELECTRONIC BALLAST TECH31991–1992
UMAX DATA SYSTEMS INC31996–1998
Locations
LocationPatentsSpan
Santa Clara, California, US182006–2015
Lomita, California, US52012–2016
Palos Verdes Estates, California, US42009–2011
Rancho Palos Verdes, California, US42008–2010
Hsinchu, TW31996–1998