Inventor
Cheng-Hsing Hsu
Inventor
Hsinchu, TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores30%
H10BElectronic memory devices20%
H10DInorganic electric semiconductor devices20%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy10%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution10%
Y02PClimate change mitigation technologies in the production or processing of goods10%
PatentTitleYear
11,043,716Dual-battery tenon structure and electronic device with the same20217,539,065'Method of programming non-volatile memory'20097,307,882'Non-volatile memory'20077,218,554'Method of refreshing charge-trapping non-volatile memory using band-to-band tunneling hot hole (BTBTHH) injection'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2009Patents assigned to MACRONIX INT CO LTD (3)· patent assignee history
2007–2009Based in Hsinchu, TW· patent location history
2021Patents assigned to PEGATRON CORP (1)· patent assignee history
2021Based in Taipei, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 3 | 2007–2009 |
| PEGATRON CORP | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 3 | 2007–2009 |
| Taipei, TW | 1 | 2021 |