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Inventor

Shigetoshi Ito

Inventor
Ikoma, JP

Overview

72→
Patents
2000–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 72 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light32%
B82YSpecific uses or applications of nanostructures19%
H10HInorganic light-emitting semiconductor devices having potential barriers16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H05BElectric heating4%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
F21SNon-portable lighting devices2%
G11BInformation storage based on relative movement between record carrier and transducer2%
H01LSemiconductor devices2%
PatentTitleYear
10,680,405Semiconductor light-emitting device202010,381,528Image display apparatus201910,218,152Semiconductor laser diode with low threshold current201910,026,869Nitride semiconductor light-emitting device and method for producing the same20189,911,902'Semiconductor light-emitting device'20189,518,712'Light projecting device and vehicular headlamp'20169,219,123'Method of producing a nitride semiconductor crystal with precursor containing carbon and oxygen, and nitride semiconductor crystal and semiconductor device made by the method'20159,109,771'Light projecting device and vehicular headlamp'20158,833,991'Light emitting device, with light guide member having smaller exit section, and illuminating device, and vehicle headlight including the same'20148,824,516'GaN-based laser device'20148,807,812'Light emitting device, illuminating device, and headlamp'20148,548,019'GaN laser element'20138,502,238'Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device'20138,456,394'Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus'20138,334,544'Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region'20128,335,242'Nitride semiconductor laser device mounted on a stem'20128,248,335'Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus'20128,212,467'Light emitting device'20128,170,076'GaN laser element'20128,076,165'Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method'20117,995,632'Nitride semiconductor laser chip and fabrication method thereof'20117,889,161'Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus'20117,858,992'Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus'20107,804,880'Nitride semiconductor laser device and nitride semiconductor laser apparatus'20107,792,172'Nitride semiconductor laser device'20107,781,244'Method of manufacturing nitride-composite semiconductor laser element, with disclocation control'20107,700,963'Nitride semiconductor light-emitting device'20107,579,627'Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus'20097,573,446'Method and device for driving LED element, illumination apparatus, and display apparatus'20097,515,621'Nitride semiconductor laser element'20097,498,608'Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device'20097,462,882'Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus'20087,421,000'Semiconductor laser device'20087,410,819'Nitride semiconductor light-emitting device and method for producing same'20087,356,059'Nitride semiconductor laser device and semiconductor optical device'20087,199,398'Nitride semiconductor light emitting device having electrode electrically separated into at least two regions'20077,180,487'Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus'20077,177,336'Semiconductor laser device'20077,167,489'GaN-based semiconductor laser device'20077,142,575'Semiconductor laser element and optical data recording device'20067,041,523'Method of fabricating nitride semiconductor device'20067,015,058'Method for fabricating a group III nitride semiconductor laser device'20067,012,283'Nitride semiconductor light emitting element and optical device containing it'20066,984,841'Nitride semiconductor light emitting element and production thereof'20066,924,512'Nitride semiconductor light-emitting device and optical apparatus including the same'20056,909,120'Nitride semiconductor luminous element and optical device including it'20056,897,484'Nitride semiconductor light emitting element and manufacturing method thereof'20056,891,201'Nitride semiconductor laser element and optical device containing it'20056,891,189'Nitride semiconductor laser device and optical pickup apparatus therewith'20056,888,867'Semiconductor laser device and fabrication method thereof'20056,881,981'Nitride semiconductor light emitting device chip'20056,873,635'Nitride semiconductor laser device and optical information reproduction apparatus using the same'20056,865,201'Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus'20056,858,882'Nitride semiconductor light-emitting device and optical device including the same'20056,815,728'Nitride semiconductor light-emitting device and optical device and light-emitting apparatus with the nitride semiconductor light-emitting device'20046,812,496'Group III nitride semiconductor laser device'20046,765,233'Semiconductor substrate, light emitting device, and method for producing the same'20046,737,678'Nitride semiconductor device and fabrication method thereof'20046,735,231'Semiconductor laser device'20046,670,647'Semiconductor light emitting element, display device and optical information reproduction device using the same, and fabrication method of semiconductor light emitting element'20036,628,249'Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus'20036,617,607'Nitride semiconductor laser device and optical pickup apparatus therewith'20036,614,824'Nitride semiconductor laser device and optical device using the same'20036,593,595'Semiconductor light-emitting device and method for producing same'20036,586,779'Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same'20036,583,442'Light emitter device and a method for manufacturing the same'20036,493,367'Semiconductor laser device and optical information reproduction apparatus'20026,452,216'Nitride semiconductor light emitting device and apparatus including the same'20026,399,966'Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same'20026,320,209'Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same'20016,294,440'Semiconductor substrate, light-emitting device, and method for producing the same'20016,097,040'Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2020Patents assigned to SHARP KK (71)· patent assignee history
2000–2013Based in Ikoma, JP· patent location history
2002–2006Based in Nara, JP· patent location history
2004–2013Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (9)· patent assignee history
2007–2014Based in Shijonawate, JP· patent location history
2011–2014Patents assigned to ITO SHIGETOSHI (11)· patent assignee history
2011–2013Patents assigned to TANEYA MOTOTAKA (5)· patent assignee history
2011–2013Patents assigned to UETA YOSHIHIRO (3)· patent assignee history
2012–2019Based in Osaka, JP· patent location history
2018–2020Based in Sakai, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHARP KK712000–2020
ITO SHIGETOSHIself112011–2014
SUMITOMO ELECTRIC INDUSTRIES92004–2013
TANEYA MOTOTAKA52011–2013
UETA YOSHIHIRO32011–2013
Locations
LocationPatentsSpan
Ikoma, JP372000–2013
Shijonawate, JP142007–2014
Osaka, JP102012–2019
Nara, JP72002–2006
Sakai, JP32018–2020