Inventor
Bong-Jin Kuh
Inventor
Gyeonggi-do, KR
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices22%
H10NElectric solid-state devices not otherwise provided for18%
G11CStatic stores13%
H10DInorganic electric semiconductor devices11%
H01LSemiconductor devices10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
C04BLime, magnesia3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
9,842,966'Nano-structured semiconductor light-emitting element'20179,608,163'Nano-structure semiconductor light emitting device'20179,589,795'Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same'20179,576,969'Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same'20179,553,141'Semiconductor device having supporter'20179,391,090'Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same'20169,316,789'Semiconductor devices and methods of manufacturing the same'20169,269,578'Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same'20169,142,558'Semiconductor device having supporter and method of forming the same'20159,110,233'Semiconductor devices'20158,993,420'Methods of forming epitaxial layers'20158,970,039'Integrated circuit devices including electrode support structures and methods of fabricating the same'20158,815,697'Method of fabricating semiconductor device'20148,617,950'Method of forming a capacitor and method of manufacturing a semiconductor device using the same'20138,513,051'Methods of forming phase-changeable memory devices including an adiabatic layer'20138,492,251'Method of forming a thin layer structure'20138,445,354'Methods for manufacturing a phase-change memory device'20138,133,429'Methods for manufacturing a phase-change memory device'20128,026,543'Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same'20118,012,789'Nonvolatile memory device and method of manufacturing the same'20117,989,259'Methods of manufacturing phase-changeable memory devices including upper and lower electrodes'20117,943,918'Multi-layer phase-changeable memory devices'20117,817,464'Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same'20107,791,932'Phase-change material layer and phase-change memory device including the phase-change material layer'20107,741,631'Phase-changeable memory devices including phase-changeable materials on silicon nitride layers'20107,727,458'Method of forming a chalcogenide compound target'20107,692,176'Phase-changeable memory devices including an adiabatic layer'20107,615,401'Methods of fabricating multi-layer phase-changeable memory devices'20097,482,616'Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same'20097,476,917'Phase-changeable memory devices including nitrogen and/or silicon dopants'20097,462,900'Phase changeable memory devices including nitrogen and/or silicon'20087,425,735'Multi-layer phase-changeable memory devices'20087,411,208'Phase-change memory device having a barrier layer and manufacturing method'20087,402,851'Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same'20087,394,087'Phase-changeable memory devices and methods of forming the same'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2017Patents assigned to SAMSUNG ELECTRONICS CO LTD (35)· patent assignee history
2008–2015Based in Gyeonggi-do, KR· patent location history
2011–2017Based in Suwon-si, KR· patent location history
2012–2014Patents assigned to KUH BONG-JIN (5)· patent assignee history
2012–2013Patents assigned to HA YONG-HO (3)· patent assignee history
2013–2014Patents assigned to CHOI HAN-MEI (2)· patent assignee history
2013–2014Patents assigned to KIM KI-CHUL (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 35 | 2008–2017 |
| KUH BONG-JINself | 5 | 2012–2014 |
| HA YONG-HO | 3 | 2012–2013 |
| CHOI HAN-MEI | 2 | 2013–2014 |
| KIM KI-CHUL | 2 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 20 | 2008–2015 |
| Suwon-si, KR | 15 | 2011–2017 |