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Inventor

Isamu Matsuyama

Inventor
Tokyo, JP

Overview

3→
Patents
1987–2011
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices67%
G01MTesting static or dynamic balance of machines or structures33%
PatentTitleYear
7,994,035'Semiconductor device fabricating method including thermal oxidation of a substrate, forming a second oxide, and thermal processing a gate electrode'20116,037,615'Metal semiconductor FET having doped A1GaAs layer between channel layer and A1GaAs buffer layer'20004,656,509'Water leakage monitoring system'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987Patents assigned to MITSUBISHI ELECTRIC CORP (1)· patent assignee history
1987Based in Kobe, JP· patent location history
2000Patents assigned to OKI ELECTRIC IND CO LTD (1)· patent assignee history
2000Based in Toyko, JP· patent location history
2011Patents assigned to OKI SEMICONDUCTOR CO LTD (1)· patent assignee history
2011Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI ELECTRIC CORP11987
OKI ELECTRIC IND CO LTD12000
OKI SEMICONDUCTOR CO LTD12011
Locations
LocationPatentsSpan
Tokyo, JP12011
Toyko, JP12000
Kobe, JP11987