Inventor

Takeshi Okazawa

Inventor

Tokyo, JP

Overview

28→

Patents

1986–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 28 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores23%

H10DInorganic electric semiconductor devices23%

H10BElectronic memory devices20%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

B82YSpecific uses or applications of nanostructures5%

H10NElectric solid-state devices not otherwise provided for5%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%

G01RMeasuring electric variables2%

H04LTransmission of digital information, e.g. telegraphic communication2%

PatentTitleYear

10,992,523Information processing apparatus, peripheral apparatus, control method thereof, storage medium, and system2021 7,405,958'Magnetic memory device having XP cell and Str cell in one chip'2008 7,009,876'MRAM and data writing method therefor'2006 6,939,722'Method of forming magnetic memory'2005 6,834,018'Nonvolatile memory device having data read operation with using reference cell and method thereof'2004 6,812,537'Magnetic memory and method of operation thereof'2004 6,746,875'Magnetic memory and method of its manufacture'2004 6,703,249'Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect'2004 6,674,663'Nonvolatile storage device and operating method thereof'2004 6,643,168'Nonvolatile magnetic storage device'2003 6,532,163'Non-volatile semiconductor memory device with magnetic memory cell array'2003 6,477,077'Non-volatile memory device'2002 5,972,750'Nonvolatile semiconductor memory device and manufacturing method of the same'1999 5,973,355'Nonvolatile semiconductor memory device and manufacturing method of the same'1999 5,787,036'Flash memory including improved transistor cells and a method of programming the memory'1998 5,675,163'Non-volatile semiconductor memory device with thin insulation layer below erase gate'1997 5,523,976'Non-volatile semiconductor memory device having a memory cell group operative as a redundant memory cell group for replacement of another group'1996 5,523,969'Electrically erasable programmable non-volatile semiconductor memory device and method for manufacturing the same'1996 5,371,704'Nonvolatile memory device with compensation for over-erasing operation'1994 5,316,961'Floating gate type erasable and programmable read only memory cell, method of making the same, and electrically erasing and writing method'1994 5,309,402'Flash electrically erasable and programmable ROM'1994 5,295,107'Method of erasing data stored in flash type nonvolatile memory cell'1994 5,208,179'Method of fabricating programmable read only memory device having trench isolation structure'1993 4,980,732'Semiconductor device having an improved thin film transistor'1990 4,885,624'Stacked metal-insulator semiconductor device'1989 4,716,131'Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film'1987 4,700,212'Semiconductor integrated circuit device of high degree of integration'1987 4,584,760'Method of manufacturing a semiconductor device having a polycrystalline silicon layer'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2003Patents assigned to NEC CORP (19)· patent assignee history

1986–2021Based in Tokyo, JP· patent location history

2004–2008Patents assigned to NEC ELECTRONICS CORP (8)· patent assignee history

2004–2008Based in Kanagawa, JP· patent location history

2021Patents assigned to CANON KK (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NEC CORP	19	1986–2003
NEC ELECTRONICS CORP	8	2004–2008
CANON KK	1	2021

Locations

Location	Patents	Span
Tokyo, JP	24	1986–2021
Kanagawa, JP	4	2004–2008