Inventor
Ya-Hong Xie
Inventor
Beverly Hills, CA, US
Overview
Patents· 39 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
B82YSpecific uses or applications of nanostructures10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
B05DProcesses for applying fluent materials to surfaces, in general2%
G02BOptical elements, systems or apparatus2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
PatentTitleYear
10,001,442Optical fiber-based hybrid SERS platform for in vivo detection of bio-molecules20189,206,058'Water purification and enhancement systems'20158,233,315'Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor'20128,101,984'Spin injector'20128,098,515'Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor'20127,935,956'Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers'20117,875,953'Low crosstalk substrate for mixed-signal integrated circuits'20117,779,883'System for controlling nucleation in self-assembled films'20107,772,117'Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications'20107,754,008'Method of forming dislocation-free strained thin films'20107,732,237'Quantum dot based optoelectronic device and method of making same'20107,589,882'Optical transceiver integratable with silicon VLSI'20097,517,776'Method for controlling dislocation positions in silicon germanium buffer layers'20097,459,731'Device containing isolation regions with threading dislocations'20087,402,884'Low crosstalk substrate for mixed-signal integrated circuits'20087,273,811'Method for chemical vapor deposition in high aspect ratio spaces'20077,265,028'Method for producing dislocation-free strained crystalline films'20077,262,112'Method for producing dislocation-free strained crystalline films'20077,186,626'Method for controlling dislocation positions in silicon germanium buffer layers'20077,176,129'Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications'20077,118,784'Method and apparatus for controlling nucleation in self-assembled films'20067,045,437'Method for fabricating shallow trenches'20066,633,056'Hetero-integration of dissimilar semiconductor materials'20036,495,385'Hetero-integration of dissimilar semiconductor materials'20026,395,611'Inductor or low loss interconnect and a method of manufacturing an inductor or low loss interconnect in an integrated circuit'20026,370,307'Optical device formed on a substrate with thermal isolation regions formed therein'20026,312,581'Process for fabricating an optical device'20016,136,673'Process utilizing selective TED effect when forming devices with shallow junctions'20005,888,885'Method for fabricating three-dimensional quantum dot arrays and resulting products'19995,767,561'Integrated circuit device with isolated circuit elements'19985,736,749'Integrated circuit device with inductor incorporated therein'19985,442,205'Semiconductor heterostructure devices with strained semiconductor layers'19955,308,444'Method of making semiconductor heterostructures of gallium arsenide on germanium'19945,239,193'Silicon photodiode for monolithic integrated circuits'19935,221,413'Method for making low defect density semiconductor heterostructure and devices made thereby'19935,141,878'Silicon photodiode for monolithic integrated circuits and method for making same'19925,063,569'Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces'19915,012,486'Vertical cavity semiconductor laser with lattice-mismatched mirror stack'19914,999,843'Vertical semiconductor laser with lateral electrode contact'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1994Patents assigned to AT & T BELL LAB (7)· patent assignee history
1991–2000Based in Flemington, NJ, US· patent location history
1998–2000Patents assigned to LUCENT TECHNOLOGIES INC (4)· patent assignee history
2001–2012Based in Beverly Hills, CA, US· patent location history
2002–2018Patents assigned to UNIV CALIFORNIA (23)· patent assignee history
2002Patents assigned to AGERE SYST GUARDIAN CORP (2)· patent assignee history
2012–2015Patents assigned to XIE YA-HONG (4)· patent assignee history
2015–2018Based in Dana Point, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV CALIFORNIA | 23 | 2002–2018 |
| AT & T BELL LAB | 7 | 1991–1994 |
| LUCENT TECHNOLOGIES INC | 4 | 1998–2000 |
| XIE YA-HONGself | 4 | 2012–2015 |
| AGERE SYST GUARDIAN CORP | 2 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Beverly Hills, California, US | 25 | 2001–2012 |
| Flemington, New Jersey, US | 12 | 1991–2000 |
| Dana Point, California, US | 2 | 2015–2018 |