Inventor

HUAN-JUST LIN

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 51 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices24%

H01LSemiconductor devices24%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

B82YSpecific uses or applications of nanostructures4%

H01JElectric discharge tubes or discharge lamps3%

H10BElectronic memory devices3%

H10NElectric solid-state devices not otherwise provided for3%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%

G11CStatic stores1%

PatentTitleYear

12,550,362Transistor device with tapered gate contact profile2026 12,520,500Memory device and method for forming thereof2026 12,477,821Semiconductor device having air spacers2025 12,471,357Semiconductor device and method2025 12,446,296Etch profile control of via opening2025 12,424,444Soft ashing process for forming protective layer on conductive cap layer of semiconductor device2025 12,389,667Fin field-effect transistor device and method2025 12,349,435Vertical device having a protrusion source2025 12,293,910Interconnect structure for semiconductor devices2025 12,293,947Gap patterning for metal-to-source/drain plugs in a semiconductor device2025 12,278,277Fin field-effect transistor and method of forming the same2025 12,272,731Middle-of-line interconnect structure and manufacturing method2025 12,268,027Middle-of-line interconnect structure and manufacturing method2025 12,237,228Semiconductor device and method2025 12,219,882Memory cell with low resistance top electrode contact and methods for forming the same2025 12,205,816Interconnect structure for semiconductor devices2025 12,183,633Dielectric cap structure in semiconductor devices and methods of manufacturing the same2024 12,154,784Semiconductor devices and methods of manufacture2024 12,148,620Tuning threshold voltage through meta stable plasma treatment2024 12,142,532Interconnect structures for semiconductor devices and methods of manufacturing the same2024 12,125,898Semiconductor device and manufacturing method thereof2024 12,107,003Etch profile control of gate contact opening2024 12,094,768Method for sealing a seam, semiconductor structure, and method for manufacturing the same2024 12,080,597Semiconductor devices and methods of manufacture2024 12,075,707Semiconductor structure and method for forming the same2024 12,057,345Etch profile control of gate contact opening2024 12,040,233Fin field-effect transistor device and method2024 12,033,860Soft ashing process for forming protective layer on conductive cap layer of semiconductor device2024 11,967,526Integrated circuit structure and manufacturing method thereof2024 11,942,371Etch profile control of via opening2024 11,923,433Fin field-effect transistor and method of forming the same2024 11,916,131Vertical device having a protrusion source2024 11,842,930Gap patterning for metal-to-source/drain plugs in a semiconductor device2023 11,810,919Semiconductor device structure with conductive via structure and method for forming the same2023 11,798,943Transistor source/drain contacts and methods of forming the same2023 11,770,977Semiconductor structure and method for forming the same2023 11,769,770Methods of forming a semiconductor device having an air spacer2023 11,749,732Etch profile control of via opening2023 11,735,481Semiconductor device and method2023 11,728,212Integrated circuit structure and manufacturing method thereof2023 11,728,218Semiconductor device and method2023 11,705,491Etch profile control of gate contact opening2023 11,688,606Tuning threshold voltage through meta stable plasma treatment2023 11,664,272Etch profile control of gate contact opening2023 11,626,326Interconnect structures for semiconductor devices and methods of manufacturing the same2023 11,581,218Etch profile control of gate contact opening2023 11,545,619Memory device structure and method for forming the same2023 11,355,399Gap patterning for metal-to-source/drain plugs in a semiconductor device2022 11,239,083Tuning threshold voltage through meta stable plasma treatment2022 11,227,788Method of forming isolation layer2022 11,139,211Selective NFET/PFET recess of source/drain regions2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (51)· patent assignee history

2021–2026Based in TW· patent location history

2023Patents assigned to TAIWAN SEMICONDCUTOR MFG COMPANY LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	51	2021–2026
TAIWAN SEMICONDCUTOR MFG COMPANY LTD	1	2023

Locations

Location	Patents	Span
TW	51	2021–2026