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Inventor

Arpan Chakraborty

Inventor
Goleta, CA, US

Overview

58→
Patents
2007–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers26%
H01LSemiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
B82YSpecific uses or applications of nanostructures6%
F21KNon-electric light sources using luminescence5%
H10DInorganic electric semiconductor devices4%
C30BSingle-crystal growth4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
11,114,594Light emitting device packages using light scattering particles of different size202110,714,655LED structures for reduced non-radiative sidewall recombination202010,700,244System and method for selected pump LEDs with multiple phosphors202010,529,892Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices202010,446,712LED structures for reduced non-radiative sidewall recombination201910,193,013LED structures for reduced non-radiative sidewall recombination201910,147,850System and method for providing color light sources in proximity to predetermined wavelength conversion structures20189,865,772'LED structures for reduced non-radiative sidewall recombination'20189,793,435'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20179,660,152'System and method for selected pump LEDs with multiple phosphors'20179,653,650'Method and system for epitaxy processes on miscut bulk substrates'20179,646,827'Method for smoothing surface of a substrate containing gallium and nitrogen'20179,601,659'LED structures for reduced non-radiative sidewall recombination'20179,484,492'LED structures for reduced non-radiative sidewall recombination'20169,293,667'System and method for selected pump LEDs with multiple phosphors'20169,287,469'Encapsulation for phosphor-converted white light emitting diode'20169,263,423'Interdigitated multiple pixel arrays of light-emitting devices'20169,236,530'Miscut bulk substrates'20169,231,376'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20169,159,888'Wafer level phosphor coating method and devices fabricated utilizing method'20159,159,553'Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface'20159,076,711'Interdigitated multiple pixel arrays of light-emitting devices'20159,024,349'Wafer level phosphor coating method and devices fabricated utilizing method'20158,998,444'Solid state lighting devices including light mixtures'20158,946,865'Gallium—nitride-on-handle substrate materials and devices and method of manufacture'20158,922,110'Interdigitated multiple pixel arrays of light-emitting devices'20148,916,890'Light emitting diodes with light filters'20148,911,518'Method and system for dicing substrates containing gallium and nitrogen material with conductive core via structures'20148,905,588'System and method for providing color light sources in proximity to predetermined wavelength conversion structures'20148,882,935'Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition'20148,866,126'Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations'20148,796,912'Interdigitated multiple pixel arrays of light-emitting devices'20148,786,053'Gallium-nitride-on-handle substrate materials and devices and method of manufacture'20148,740,413'System and method for providing color light sources in proximity to predetermined wavelength conversion structures'20148,686,466'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20148,679,876'Laser diode and method for fabricating same'20148,643,024'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20148,637,883'Low index spacer layer in LED devices'20148,519,437'Polarization doping in nitride based diodes'20138,502,246'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20138,492,185'Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices'20138,481,991'Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations'20138,274,206'Interdigitated multiple pixel arrays of light-emitting devices'20128,263,500'Photoelectrochemical etching for laser facets'20128,232,564'Wafer level phosphor coating technique for warm light emitting diodes'20128,178,888'Semiconductor light emitting devices with high color rendering'20128,105,919'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20128,101,443'LEDs using single crystalline phosphor and methods of fabricating same'20127,999,283'Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes'20117,911,126'Interdigitated multiple pixel arrays of light-emitting devices'20117,859,000'LEDs using single crystalline phosphor and methods of fabricating same'20107,846,757'Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices'20107,769,066'Laser diode and method for fabricating same'20107,723,216'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20107,682,944'Pendeo epitaxial structures and devices'20107,518,305'Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking'20097,504,274'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20097,186,302'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2020Patents assigned to JAPAN SCIENCE & TECH AGENCY (9)· patent assignee history
2007–2010Based in Isla Vista, CA, US· patent location history
2009–2020Patents assigned to UNIV CALIFORNIA (22)· patent assignee history
2009–2021Based in Goleta, CA, US· patent location history
2010–2016Patents assigned to CREE INC (15)· patent assignee history
2012–2021Patents assigned to CHAKRABORTY ARPAN (28)· patent assignee history
2013–2020Patents assigned to SORAA INC (13)· patent assignee history
2014–2020Based in Chandler, AZ, US· patent location history
2014–2020Based in Fremont, CA, US· patent location history
2017–2020Based in San Ramon, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CHAKRABORTY ARPANself282012–2021
UNIV CALIFORNIA222009–2020
CREE INC152010–2016
SORAA INC132013–2020
JAPAN SCIENCE & TECH AGENCY92007–2020
Locations
LocationPatentsSpan
Goleta, California, US372009–2021
Chandler, AZ, US82014–2020
Fremont, California, US62014–2020
San Ramon, California, US52017–2020
Isla Vista, California, US22007–2010