Inventor

Kuniyoshi Omura

Inventor

Ikoma, JP

Overview

5→

Patents

1990–2001

Patent span

General tagging of new technological developments

Primary field (CPC Y)

Patents· 5 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation28%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution28%

Y02PClimate change mitigation technologies in the production or processing of goods28%

C23CCoating metallic material17%

PatentTitleYear

6,211,043'Method of manufacturing a compound semiconductor thin film on a substrate'2001 5,920,798'Method of preparing a semiconductor layer for an optical transforming device'1999 5,714,391'Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device'1998 5,538,903'Method of manufacturing solar cell'1996 4,940,604'Method for production of copper indium diselenide'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–1996Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (2)· patent assignee history

1990Based in Osaka, JP· patent location history

1996Based in Higashiosaka, JP· patent location history

1998Patents assigned to MATSUSHITA BATTERY IND (1)· patent assignee history

1998–2001Based in Ikoma, JP· patent location history

1999–2001Patents assigned to MATSUSHITA BATTERY IND CO LTD (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MATSUSHITA BATTERY IND CO LTD	2	1999–2001
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD	2	1990–1996
MATSUSHITA BATTERY IND	1	1998

Locations

Location	Patents	Span
Ikoma, JP	3	1998–2001
Higashiosaka, JP	1	1996
Osaka, JP	1	1990