Inventor
MATTHEW METZ
Inventor
US
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices28%
H10DInorganic electric semiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10BElectronic memory devices9%
B82YSpecific uses or applications of nanostructures4%
H10NElectric solid-state devices not otherwise provided for3%
B01DSeparation2%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
Y02CCapture, storage, sequestration or disposal of greenhouse gases [ghg]2%
PatentTitleYear
12,500,162Staggered vertically spaced integrated circuit line metallization with differential vias and metal-selective deposition202512,482,744Subtractively patterned interconnect structures for integrated circuits202512,394,716Integrated circuit interconnect structures with graphene cap202512,376,342Passivation layers for thin film transistors202512,341,065Deposition tool and method for filling deep trenches202512,310,101Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication202512,266,720Transistors with monocrystalline metal chalcogenide channel materials202512,266,570Self-aligned interconnect structures and methods of fabrication202512,183,739Ribbon or wire transistor stack with selective dipole threshold voltage shifter202412,100,731Crystalline bottom electrode for perovskite capacitors and methods of fabrication202412,027,458Subtractively patterned interconnect structures for integrated circuits202411,955,560Passivation layers for thin film transistors and methods of fabrication202411,887,988Thin film transistor structures with regrown source and drain202411,862,715Vertical tunneling field-effect transistors202411,843,054Vertical architecture of thin film transistors202311,777,013Channel formation for three dimensional transistors202311,756,998Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)202311,717,806Adsorber202311,695,081Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)202311,640,984Transistor device with (anti)ferroelectric spacer structures202311,616,130Transistor device with variously conformal gate dielectric layers202311,527,656Contact electrodes for vertical thin-film transistors202211,522,060Epitaxial layers on contact electrodes for thin- film transistors202211,508,577Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)202211,465,127Adsorption based gas separation method202211,444,024Subtractively patterned interconnect structures for integrated circuits202211,444,205Contact stacks to reduce hydrogen in thin film transistor202211,335,793Vertical tunneling field-effect transistors202211,276,694Transistor structure with indium phosphide channel202211,257,904Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to INTEL CORP (28)· patent assignee history
2022–2023Patents assigned to AIR LIQUIDE (2)· patent assignee history
2022–2023Patents assigned to AIR LIQUIDE ADVANCED TECH US LLC (2)· patent assignee history
2022–2025Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 28 | 2022–2025 |
| AIR LIQUIDE | 2 | 2022–2023 |
| AIR LIQUIDE ADVANCED TECH US LLC | 2 | 2022–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 30 | 2022–2025 |