Inventor
Paul Fons
Inventor
Tsukuba, JP
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers24%
H10NElectric solid-state devices not otherwise provided for15%
C30BSingle-crystal growth12%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light12%
G11CStatic stores6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
Y02PClimate change mitigation technologies in the production or processing of goods6%
H01LSemiconductor devices3%
PatentTitleYear
9,129,673'Superlattice recording layer for a phase change memory'20158,530,314'Solid-state memory manufacturing method'20138,396,335'Solid-state memory and semiconductor device'20138,335,106'Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device'20128,295,080'Solid-state memory device, data processing system, and data processing device'20127,605,012'ZnO based compound semiconductor light emitting device and method for manufacturing the same'20096,987,029'ZnO based compound semiconductor light emitting device and method for manufacturing the same'20066,770,913'ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit'20046,674,098'ZnO compound semiconductor light emitting element'20046,649,434'Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer'20036,638,846'Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device'20036,566,162'Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film'20036,531,408'Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same'20036,472,241'Radical cell device and method for manufacturing groups II-VI compound semiconductor device'20026,281,036'Method of fabricating film for solar cells'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2012Based in Ibaraki, JP· patent location history
2002–2015Patents assigned to NAT INST OF ADVANCED IND SCIEN (10)· patent assignee history
2002–2009Patents assigned to ROHM CO LTD (7)· patent assignee history
2002–2015Based in Tsukuba, JP· patent location history
2012–2015Patents assigned to FONS PAUL (5)· patent assignee history
2012–2015Patents assigned to KOLOBOV ALEXANDER (5)· patent assignee history
2012–2015Patents assigned to TOMINAGA JUNJI (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NAT INST OF ADVANCED IND SCIEN | 10 | 2002–2015 |
| ROHM CO LTD | 7 | 2002–2009 |
| FONS PAULself | 5 | 2012–2015 |
| KOLOBOV ALEXANDER | 5 | 2012–2015 |
| TOMINAGA JUNJI | 5 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tsukuba, JP | 13 | 2002–2015 |
| Ibaraki, JP | 2 | 2001–2012 |