Inventor
TOBIAS HOECHBAUER
Inventor
AT
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
H10DInorganic electric semiconductor devices20%
C30BSingle-crystal growth10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
12,249,504Manufacturing and reuse of semiconductor substrates202511,887,894Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers202411,721,547Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to INFINEON TECHNOLOGIES AG (3)· patent assignee history
2023–2025Based in AT· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 3 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| AT | 3 | 2023–2025 |