Inventor
Daisuke Ikeno
Inventor
Yokohama, JP
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices25%
H01LSemiconductor devices23%
H10NElectric solid-state devices not otherwise provided for18%
H10DInorganic electric semiconductor devices10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G11CStatic stores4%
H01FMagnets3%
B82YSpecific uses or applications of nanostructures1%
C23CCoating metallic material1%
PatentTitleYear
10,833,265Storage device202010,566,280Semiconductor device and method of manufacturing the same202010,269,825Semiconductor device and method for manufacturing same20199,911,753'Semiconductor device and method for manufacturing semiconductor device'20189,905,462'Semiconductor device and method for manufacturing the same'20189,780,111'Semiconductor device and method for manufacturing the same'20179,779,978'Method of manufacturing semiconductor device and semiconductor manufacturing apparatus'20179,673,217'Semiconductor device and method for manufacturing same'20179,570,464'Method for manufacturing semiconductor device'20179,406,694'Semiconductor device and method for manufacturing the same'20169,231,192'Semiconductor memory device and method for manufacturing the same'20169,196,823'Magnetoresistive effect element'20159,178,137'Magnetoresistive element and magnetic memory'20159,070,866'Magnetoresistive effect element and manufacturing method thereof'20158,982,614'Magnetoresistive effect element and manufacturing method thereof'20158,878,320'Semiconductor memory device'20148,741,161'Method of manufacturing semiconductor device'20148,710,604'Magnetoresistive element and manufacturing method of the same'20148,653,614'Semiconductor memory device and method for manufacturing the same'20148,604,573'Semiconductor memory device'20138,587,043'Magnetoresistive random access memory and method of manufacturing the same'20138,410,529'Magnetic random access memory and method of fabricating the same'20138,198,155'Semiconductor device and method of manufacturing the same'20128,188,547'Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodes'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2017Patents assigned to TOSHIBA KK (17)· patent assignee history
2012–2015Patents assigned to IKENO DAISUKE (10)· patent assignee history
2012–2016Based in Yokohama, JP· patent location history
2012Based in Tokyo, JP· patent location history
2013–2014Patents assigned to YAMAKAWA KOJI (7)· patent assignee history
2013–2014Patents assigned to NATORI KATSUAKI (6)· patent assignee history
2013Based in Kanagawa, JP· patent location history
2015–2020Based in Yokkaichi, JP· patent location history
2016–2019Based in Mie, JP· patent location history
2017–2020Patents assigned to TOSHIBA MEMORY CORP (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 17 | 2012–2017 |
| IKENO DAISUKEself | 10 | 2012–2015 |
| YAMAKAWA KOJI | 7 | 2013–2014 |
| NATORI KATSUAKI | 6 | 2013–2014 |
| TOSHIBA MEMORY CORP | 6 | 2017–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 10 | 2012–2016 |
| Mie, JP | 8 | 2016–2019 |
| Yokkaichi, JP | 4 | 2015–2020 |
| Kanagawa, JP | 1 | 2013 |
| Tokyo, JP | 1 | 2012 |