Inventor
John J. Naughton
Inventor
Idaho Falls, ID, US
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices45%
H10BElectronic memory devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
PatentTitleYear
7,940,499'Multi-pad shared current dissipation with heterogenic current protection structures'20117,825,454'Method of forming an EEPROM device and structure therefor'20107,776,677'Method of forming an EEPROM device and structure therefor'20107,655,496'Metal lift-off systems and methods using liquid solvent and frozen gas'20107,636,226'Current protection circuit using multiple sequenced bipolar transistors'20097,456,441'Single well excess current dissipation circuit'20087,141,503'Methods for manufacturing a soft error and defect resistant pre-metal dielectric layer'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006Patents assigned to AMI SEMICONDUCTOR INC (1)· patent assignee history
2006–2011Based in Idaho Falls, ID, US· patent location history
2008–2011Patents assigned to SEMICONDUCTOR COMPONENTS IND (5)· patent assignee history
2010Patents assigned to FLIR SYSTEMS (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR COMPONENTS IND | 5 | 2008–2011 |
| AMI SEMICONDUCTOR INC | 1 | 2006 |
| FLIR SYSTEMS | 1 | 2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Idaho Falls, ID, US | 7 | 2006–2011 |